Method for controlling an RF generator
AssigneeReno Technologies, Inc.
InventorImran Ahmed Bhutta
Life of this patent
Estimating the term…
Abstract
In one embodiment, an RF generator includes an RF amplifier that includes an RF input, a DC input, and an RF output, the RF amplifier configured to receive at the RF input an RF signal from an RF source; receive at the DC input a DC voltage from a DC source; and provide an output power at the RF output; and a control unit operably coupled to the DC source and the RF source, the control unit configured to receive a power setpoint for the RF output; determine a power dissipation at the RF generator; and alter the DC voltage to a final DC voltage that decreases the power dissipation at the RF generator while enabling the output power at the RF output to be substantially equal to the power setpoint.
Claims20
An RF generator comprising:
- an RF amplifier comprising an RF input, a DC input, and an RF output, the RF amplifier configured to:
- receive at the RF input an RF signal from an RF source;
- receive at the DC input a DC voltage from a DC source;
- and
- provide an output power at the RF output;
- and
- a control unit operably coupled to the DC source and the RF source, the control unit configured to:
- receive a power setpoint indicative of a desired output power at the RF output;
- determine a power dissipation at the RF generator;
- and
- alter the DC voltage to a final DC voltage that decreases the power dissipation at the RF generator while enabling the output power at the RF output to be substantially equal to the power setpoint.
A method of controlling an RF generator, the method comprising:
- a) providing an RF amplifier, the RF amplifier comprising a DC input, an RF input, and an RF output, the RF amplifier configured to provide an output power at the RF output;
- b) receiving an RF signal to the RF input of the RF amplifier;
- c) receiving a DC voltage to the DC input of the RF amplifier;
- d) receiving a power setpoint indicative of a desired output power at the RF output;
- e) determining a power dissipation at the RF generator;
- and
- f) altering the DC voltage to a final DC voltage that decreases the power dissipation at the RF generator while enabling the output power at the RF output to be substantially equal to the power setpoint.
A method of fabricating a semiconductor comprising:
- placing a substrate in a plasma chamber configured to deposit a material layer onto the substrate or etch a material layer from the substrate;
- and
- energizing plasma within the plasma chamber by coupling RF power from an RF source into the plasma chamber to perform a deposition or etching;
- wherein the RF power is provided by an RF generator, the RF generator controlled by:
- a) providing an RF amplifier, the RF amplifier comprising a DC input, an RF input, and an RF output, the RF amplifier configured to provide an output power at the RF output;
- b) providing an RF signal to the RF input of the RF amplifier,
- c) providing a DC voltage to the DC input of the RF amplifier;
- d) receiving a power setpoint indicative of a desired output power at the RF output;
- e) determining a power dissipation at the RF generator;
- and
- f) altering the DC voltage to a final DC voltage that decreases the power dissipation at the RF generator while enabling the output power at the RF output to be substantially equal to the power setpoint.
Dependencies are inferred from the claim text.