Semiconductor device having electrical fuse and control method thereof
AssigneeLongitude Semiconductor S.a.r.l.
InventorsShuichi Kubouchi, Daiki Nakashima
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Abstract
To provide an electrical fuse that is connected to a detection node via a selective transistor, a precharge transistor that precharges the detection node in a state where the selective transistor is off; a bias transistor that passes a bias current to the detection node in a state where the selective transistor is on and the precharge transistor is off, and a detection circuit that detects a potential of the detection node in a state where the bias current is flowing into the detection node, wherein the bias transistor reduces an amount of the bias current in a stepwise manner or a continuous manner.
Claims10
A semiconductor device comprising:
- a fuse circuit including a fuse element and a circuit node operatively connected to the fuse element;
- a first transistor configured to precharge the circuit node;
- a second transistor and a third transistor connected in series between the circuit node and a voltage line;
- a control circuit configured to control the second transistor in response to a level at the circuit node;
- and
- a bias generating circuit configured to supply a gate of the third transistor with a bias voltage and to control the bias voltage to take a first level and then change from the first level to a second level, each of the first and second levels being greater than a threshold level of the third transistor.
Dependencies are inferred from the claim text.