Nonvolatile memory device, memory system including the same, and method of operating nonvolatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsSangchul Kang, Seokcheon Kwon, Soo-Woong Lee
Life of this patent
Estimating the term…
Abstract
A non-volatile memory device includes a non-volatile memory cell array including a plurality of word lines, a voltage generator configured to generate a first high-voltage using a supply voltage and a second high-voltage using an external voltage which is higher than the supply voltage, and a word line selection circuit configured. The word line selection circuit is configured apply, during a program operation of the memory cell array, the first high-voltage to a selected word line among the plurality of word lines, and the second high-voltage to unselected word lines among the plurality of word lines.
Claims20
A memory system, comprising:
- at least one nonvolatile memory device;
- a memory controller configured to control the at least one nonvolatile memory device;
- and
- a power supply configured to supply a supply voltage and a high voltage as externally supplied voltages to the at least one nonvolatile memory device, the high voltage being higher than the supply voltage,
- wherein the at least one nonvolatile memory device receives the supply voltage from the power supply and generates a first high voltage from the received supply voltage, and receives the high voltage from the power supply and generates a second high voltage from the high voltage, the first and second high voltages for operations being controlled by the memory controller,
- wherein first high voltage and the second high voltage are applied to word lines of the at least one nonvolatile memory device during a programming operation.
An electronic device, comprising,
- a host;
- and
- a storage device configured to store write data from the host and to output read data to the host,
- wherein the storage device comprises:
- a plurality of nonvolatile memory devices;
- a memory controller configured to control the nonvolatile memory devices;
- and
- a power supply configured to supply a supply voltage and a high voltage as externally supplied voltages to the plurality of nonvolatile memory devices, the high voltage being higher than the supply voltage,
- wherein each of the nonvolatile memory device receives the supply voltage and generates a first high voltage from the supply voltage, and receives the high voltage and generates a second high voltage from the high voltage, the first and second high voltages applied to word lines during operations being controlled by the memory controller.
A method of generating an operating voltage of a storage device including a plurality of nonvolatile memory devices and a memory controller configured to control the nonvolatile memory devices, comprising:
- receiving an external voltage from a host;
- generating a supply voltage and a high voltage higher than the supply voltage using the external voltage;
- supplying the supply voltage and the high voltage as externally supplied voltages to the nonvolatile memory devices;
- generating a first high voltage by charge pumping the supply voltage;
- and
- generating a second high voltage by voltage division of the high voltage,
- wherein at least one of the first high voltage and the second high voltage is used as a program voltage or a pass voltage applied to a word line in at least one program operation of the nonvolatile memory devices.
Dependencies are inferred from the claim text.