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US 9,543,031 B2Granted
Semiconductor device to improve reliability of read operation for memory cells
AssigneeSK hynix Inc.
InventorWoo Hyun Kim
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes memory cells; an operation circuit suitable for performing a read operation on the memory cells; and a check circuit suitable for comparing the number of memory cells of which threshold voltages are divided by the read operation, wherein the operation circuit changes a read voltage to be applied to the memory cells in the read operation, based on a result of the comparison.
Claims15
A semiconductor device, comprising:
- memory cells;
- an operation circuit suitable for performing a first read operation using a first read voltage on the memory cells included in a cell distribution, the first read operation dividing the cell distribution into a first cell distribution and a second cell distribution based on the first read voltage;
- and
- a check circuit suitable for comparing the number of memory cells included in the first cell distribution and the number of memory cells included in the second cell distribution,
- wherein the operation circuit selects a second read voltage based on a result of the comparison, and performs a second read operation using the second read voltage on the memory cells, and
- wherein, when the result of the comparison indicates the number of memory cells included in the first cell distribution being greater than the number of memory cells included in the second cell distribution, the second read operation divides the second cell distribution into two cell distributions based on the second read voltage.
3 more elements
A semiconductor device, comprising:
- memory cells;
- an operation circuit suitable for dividing a selected cell distribution into first and second cell distributions by performing a read operation to confirm memory cells included in each cell distribution of the first and second cell distributions;
- and
- a check circuit suitable for comparing the number of memory cells included in the first cell distribution and the number of memory cells included in the second cell distribution,
- wherein the operation circuit selects one cell distribution among the first and second cell distributions and re-performs the read operation dividing the selected cell distribution into a third and fourth cell distributions, based on a result of the comparison, and
- wherein the selected cell distribution includes the number of memory cells less than an unselected cell distribution among the first and second cell distributions.
3 more elements
Dependencies are inferred from the claim text.