Nonvolatile memory device and operating method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-Ho Song, Minsu Kim, Il-Han Park, Su Chang Jeon
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Abstract
An operating method of a nonvolatile memory device is provided. The nonvolatile memory device includes first and second page buffers, and first and second bit lines connected thereto, respectively. First and second latch nodes of the first page buffer are charged to have a voltage having a first level according to data stored in a first latch of the first page buffer. After the charging of the first latch node is started, a sensing node of the second page buffer is pre-charged. The sensing node is connected to the second bit line. Data stored in the first latch is dumped into a second latch of the first page buffer during the pre-charging of the sensing node of the second page buffer.
Claims15
An operating method of a nonvolatile memory device which includes first and second page buffers, and first and second bit lines connected thereto respectively, the operating method comprising:
- charging first and second latch nodes of the first page buffer to have a voltage of a first level according to data stored in a first latch of the first page buffer;
- after the charging of the first latch node is started, pre-charging a sensing node of the second page buffer, wherein the sensing node of the second page buffer is connected to the second bit line;
- and
- dumping data stored in the first latch into a second latch of the first page buffer during the pre-charging of the sensing node of the second page buffer.
An operating method of a nonvolatile memory device which includes first and second page buffers, and first and second bit lines connected thereto respectively, the operating method comprising:
- charging first and second latch nodes of the first page buffer to have a voltage of a first level, according to data stored in a second latch of the first page buffer;
- after the charging of the first and second latch nodes is started, pre-charging a sensing node of the second page buffer, wherein the sensing node is connected to the second bit line;
- and
- dumping data stored in the second latch of the first page buffer into a first latch of the first page buffer during the pre-charging of the sensing node.
Dependencies are inferred from the claim text.