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US 9,543,014 B2Granted
Memory circuits using a blocking state
AssigneeBertrand F. Cambou
InventorBertrand F. Cambou
Life of this patent
Estimating the term…
Abstract
A memory circuit with blocking states. In one embodiment, the memory circuit includes a two non-volatile transistors connected in series. The input state of the memory cell and the stored state of the memory cell are configured to be a plurality of states including a zero state, a one state, a no care state, and an input blocking state. When the input state of the memory cell is the blocking state, the memory cell is configured to be in a blocking mode unless the stored state of the memory cell is the no care state. When the stored state of the memory cell is the blocking state, the memory cell is configured to be in the blocking mode unless the input state of the memory cell is the no care state.
Claims17
A memory circuit comprising:
- a memory cell comprising
- a first non-volatile transistor comprising a first control gate connected to a first bit line, and
- a second non-volatile transistor comprising a second control gate connected to a second bit line,
- wherein a transistor state of each of the first non-volatile transistor and the second non-volatile transistor is configured to be programmed in a first transistor state or a second transistor state, and
- wherein the first non-volatile transistor is connected in series with the second non-volatile transistor;
- wherein the input state of the memory cell is defined by a first bit on the first bit line and a second bit on the second bit line and is configured to be a plurality of states comprising an input zero state, an input one state, an input no care state, and an input blocking state,
- wherein the stored state of the memory cell is defined by the transistor states of the first non-volatile transistor and the second non-volatile transistor and is configured to be a plurality of states comprising a stored zero state, a stored one state, a stored no care state, and a stored blocking state,
- wherein when the input state of the memory cell is the input blocking state, the memory cell is configured to be in a blocking mode unless the stored state of the memory cell is the stored no care state, and
- wherein when the stored state of the memory cell is the stored blocking state, the memory cell is configured to be in the blocking mode unless the input state of the memory cell is the input no care state.
6 more elements
A memory circuit comprising:
- a memory cell comprising
- a first non-volatile transistor comprising a first control gate connected to a first bit line, and
- a second non-volatile transistor comprising a second control gate connected to a second bit line,
- wherein a transistor state of each of the first non-volatile transistor and the second non-volatile transistor is configured to be programmed in a first transistor state or a second transistor state, and
- wherein the first non-volatile transistor is connected in series with the second non-volatile transistor;
- wherein the input state of the memory cell is defined by a first bit on the first bit line and a second bit on the second bit line and is configured to be a plurality of states comprising an input zero state, an input one state, and an input blocking state,
- wherein the stored state of the memory cell is defined by the transistor states of the first non-volatile transistor and the second non-volatile transistor and is configured to be a plurality of states comprising a stored zero state, a stored one state, and a stored no care state, and
- wherein when the input state of the memory cell is the input blocking state, the memory cell is configured to be in a blocking mode unless the stored state of the memory cell is a stored no care state.
5 more elements
A memory circuit comprising:
- a memory cell comprising
- a first non-volatile transistor comprising a first control gate connected to a first bit line, and
- a second non-volatile transistor comprising a second control gate connected to a second bit line,
- wherein a transistor state of each of the first non-volatile transistor and the second non-volatile transistor is configured to be programmed in a first transistor state or a second transistor state, and
- wherein the first non-volatile transistor is connected in series with the second non-volatile transistor;
- wherein the input state of the memory cell is defined by a first bit on the first bit line and a second bit on the second bit line and is configured to be a plurality of states comprising an input zero state, and input one state, and an input no care state,
- wherein the stored state of the memory cell is defined by the transistor states of the first non-volatile transistor and the second non-volatile transistor and is configured to be a plurality of states comprising a stored zero state, a stored one state, and a stored blocking state, and
- wherein when the stored state of the memory cell is a stored blocking state, the memory cell is configured to be in a blocking mode unless the input state of the memory cell is the input no care state.
5 more elements
Dependencies are inferred from the claim text.