Nonvolatile semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorsHiroyuki Nagashima, Hirofumi Inoue
Life of this patent
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Abstract
A nonvolatile semiconductor memory device comprises a cell array including a plurality of first lines, a plurality of second lines intersecting the plurality of first lines, and a plurality of memory cells arranged in matrix and connected at intersections of the first and second lines between both lines, each memory cell containing a serial circuit of an electrically erasable programmable variable resistive element of which resistance is nonvolatilely stored as data and a non-ohmic element; and a plurality of access circuits operative to simultaneously access the memory cells physically separated from each other in the cell array.
Claims10
A nonvolatile semiconductor memory device, comprising:
- a cell array including a plurality of unit cell arrays, one of the unit cell arrays including a plurality of bit lines, a plurality of word lines intersecting the bit lines, and a plurality of electrically rewritable memory cells connected at intersections of the bit lines and the word lines between both lines and each including a variable resistance element;
- and
- a control circuit configured to control voltages applied to the bit lines and the word lines to execute a data write that writes data to the cell array,
- the control circuit, during the data write to the cell array, simultaneously writing a part of data having a plurality of bits to at least one of the memory cells belonging to one of the unit cell arrays, and another part of the data to at least one of the memory cells belonging another of the unit cell arrays, memory cells written simultaneously being physically separated apart more than one memory cell from each other.
Dependencies are inferred from the claim text.