Programming memory cells
AssigneeMacronix International Co., Ltd.
InventorsYa Jui Lee, Kuan Fu Chen
Life of this patent
Estimating the term…
Abstract
First threshold voltages of one or more memory cells in a memory array are obtained. For each memory cell in the one or more memory cells, a target threshold voltage for the memory cell is identified. A number of programming shots to reach the target threshold voltage of the memory cell is determined based on the first threshold voltage of the memory cell. Respective number of programming shots, which are determined for the one or more memory cells, are applied to the one or more memory cells. Whether respective target threshold voltages for the one or more memory cells are reached is verified upon applying the respective number of programming shots to the one or more memory cells.
Claims18
A method comprising:
- obtaining first threshold voltages of one or more memory cells in a memory array, wherein obtaining the first threshold voltages of the one or more memory cells comprises:
- determining a distribution of the first threshold voltages of the one or more memory cells, and
- grouping the distribution of the first threshold voltages into N groups based on programming speed;
- for each memory cell in the one or more memory cells:
- identifying a target threshold voltage for the memory cell, and
- determining, based on the first threshold voltage of the memory cell, a number of programming shots to reach the target threshold voltage;
- applying, to the one or more memory cells, respective number of programming shots determined for the one or more memory cells;
- and
- upon applying the respective number of programming shots to the one or more memory cells, verifying whether respective target threshold voltages for the one or more memory cells are reached.
A device comprising:
- a memory controller;
- and
- instructions stored in a storage medium that, when executed, are configured the memory controller to perform operations comprising:
- obtaining first threshold voltages of one or more memory cells in a memory array, wherein obtaining the first threshold voltages of the one or more memory cells comprises:
- determining a distribution of the first threshold voltages of the one or more memory cells, and
- grouping the distribution of the first threshold voltages into N groups based on programming speed;
- for each memory cell in the one or more memory cells:
- identifying a target threshold voltage for the memory cell, and
- determining, based on the first threshold voltage of the memory cell, a number of programming shots to reach the target threshold voltage;
- applying, to the one or more memory cells, respective number of programming shots determined for the one or more memory cells;
- and
- upon applying the respective number of programming shots to the one or more memory cells, verifying whether respective target threshold voltages for the one or more memory cells are reached.
A method comprising:
- obtaining first threshold voltages of one or more memory cells in a memory array;
- for each memory cell in the one or more memory cells:
- identifying a target threshold voltage for the memory cell, and
- determining, based on the first threshold voltage of the memory cell, a number of programming shots to reach the target threshold voltage;
- applying, to the one or more memory cells, respective number of programming shots determined for the one or more memory cells, wherein applying the respective number of programming shots to the one or more memory cells comprises applying, to the one or more memory cells, the respective number of programming shots in successive operations without intermediate program verify operations;
- and
- upon applying the respective number of programming shots to the one or more memory cells, verifying whether respective target threshold voltages for the one or more memory cells are reached.
Dependencies are inferred from the claim text.