Apparatus and method for removing challenging polymer films and structures from semiconductor wafers

A method of fabricating a semiconductor device comprising:

• patterning a layer of photoresist onto a surface of a wafer to define metal feature areas and residual metal areas;
• depositing a metal layer over the patterned layer of photoresist, the metal layer comprising metal feature portions in the metal feature areas and residual metal portions in the residual metal areas;
• immersing the wafer for a sufficient period of time in a first bath that contains a first solvent to cause heating of the wafer and swelling of the photoresist that underlies the residual metal portions;
• removing the wafer from the first bath and delivering the wafer to a first spray location that is spaced from the first bath and is distinct and separate therefrom;
• spraying the wafer at the first spray location with a first high pressure solvent for a sufficient period of time to cause penetration of the residual metal portions to provide entry points for the solvent to enter to allow the layer of photoresist to dissolve and to physically remove the residual metal portions from the residual metal areas;
• removing the wafer from the first spray location and delivering the wafer to a second bath that is spaced from first spray location and is distinct and separate therefrom;
• immersing the wafer for a sufficient period of time in a second bath that contains a second solvent to allow diffusion of the second solvent into the underlying photoresist resulting in further swelling and dissolution;
• removing the wafer from the second bath and delivering the wafer to a second spray location that is spaced from the second bath and is distinct and separate therefrom;
• and
• spraying the wafer at the second spray location for a sufficient period of time with a second high pressure solvent to further dissolve any remaining portions of the layer of photoresist and to physically remove any residual metal portions from the residual metal areas.