Thin film transistor array panel and manufacturing method thereof
AssigneeSamsung Display Co., Ltd.
InventorsPil Soon Hong, Gwui-Hyun Park
Life of this patent
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Abstract
A thin film transistor array panel includes: a gate line and a data line on a substrate, insulatively crossing each other; a thin film transistor connected to the gate line and to the data line; a first color filter overlapping the thin film transistor; a second color filter overlapping the first color filter; a passivation layer covering the first color filter and the second color filter; a first pixel electrode on the passivation layer, the first pixel electrode overlapping the first color filter and the second color filter; and a second pixel electrode on the first pixel electrode, the second pixel electrode overlapping the first color filter and the second color filter and connected with a drain electrode of the thin film transistor.
Claims17
A thin film transistor array panel, comprising:
- a gate line and a data line on a substrate, insulatively crossing each other;
- a thin film transistor connected to the gate line and to the data line;
- a first color filter overlapping the thin film transistor;
- a second color filter overlapping the first color filter;
- a passivation layer covering the first color filter and the second color filter;
- a first pixel electrode on the passivation layer, the first pixel electrode overlapping the first color filter and the second color filter;
- and
- a second pixel electrode on the first pixel electrode, the second pixel electrode overlapping the first color filter and the second color filter and connected with a drain electrode of the thin film transistor.
A manufacturing method of a thin film transistor array panel, comprising:
- forming a thin film transistor on a substrate, connected to a gate line and a data line which insulatively cross each other;
- forming a first color filter overlapping the thin film transistor;
- forming a second color filter overlapping the first color filter on the thin film transistor;
- forming a passivation layer covering the first color filter and the second color filter;
- forming a first pixel electrode on the passivation layer, the first pixel electrode overlapping the first color filter and the second color filter;
- and
- forming a second pixel electrode on the first pixel electrode, the second pixel electrode overlapping the first color filter and the second color filter and connected to a drain electrode of the thin film transistor.
Dependencies are inferred from the claim text.