Capacitive pressure sensors
AssigneesSemiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
InventorsQiyang He, Chenglong Zhang
Life of this patent
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Abstract
A capacitive pressure sensor is provided. The capacitive pressure sensor includes a substrate; and a first electrode formed in one surface of the substrate and vertical to the surface of the substrate. The capacitive pressure sensor also includes a second electrode with a portion facing the first sub-electrode, a portion facing the second sub-electrode and a portion formed in the other surface of the substrate. Further, the capacitive pressure sensor includes a first chamber between the first electrode and the second electrode and a second chamber formed in the second electrode. Further, the pressure sensor also includes a first sealing layer formed on the second electrode; and a second sealing layer formed on the other surface of the substrate.
Claims18
A capacitive pressure sensor, comprising:
- a substrate having a trench and a through hole connecting a bottom surface of the trench and a first surface of the substrate;
- a first electrode formed on a side surface of the trench being vertical to a second surface of the substrate, wherein the first electrode includes a first sub-electrode and a second sub-electrode;
- a second electrode formed in the trench and the through hole, wherein a first portion of the second electrode is formed on side surfaces of the through hole, and a second portion of the second electrode is formed in the trench, a first chamber being formed between the first electrode and the second electrode;
- a second chamber formed in the second electrode;
- a first sealing layer formed on the second electrode such that the second electrode and the first sealing layer are suspended;
- and
- a second sealing layer formed on the first surface of the substrate to seal the through hole.
Dependencies are inferred from the claim text.