Polycrystalline diamond compacts, related products, and methods of manufacture

A method of fabricating a rotary drill bit that includes a polycrystalline diamond compact, the method comprising:

• receiving a polycrystalline diamond compact formed by a method including:
• forming a polycrystalline diamond table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature process, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, at least a portion of the plurality of interstitial regions including the metal-solvent catalyst disposed therein;
• at least partially leaching the polycrystalline diamond table to remove at least a portion of the metal-solvent catalyst therefrom to form an at least partially leached polycrystalline diamond table, the polycrystalline diamond table having a first thickness;
• subjecting the at least partially leached polycrystalline diamond table and a substrate having a second thickness to a second high-pressure/high-temperature process under diamond-stable temperature-pressure conditions effective to at least partially infiltrate the at least partially leached polycrystalline diamond table with an alloy infiltrant comprising a cobalt-boron-silicon alloy infiltrant, the second thickness of the substrate being greater than the first thickness of the at least partially leached polycrystalline diamond table;
• and
• affixing the polycrystalline diamond compact to a bit body, the polycrystalline diamond compact including the at least partially infiltrated polycrystalline diamond table and the substrate.

A method of fabricating a polycrystalline diamond compact, comprising:

• forming a polycrystalline diamond table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature process, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, at least a portion of the plurality of interstitial regions including the metal-solvent catalyst disposed therein;
• at least partially leaching the polycrystalline diamond table to remove at least a portion of the metal-solvent catalyst therefrom to form an at least partially leached polycrystalline diamond table;
• subjecting the at least partially leached polycrystalline diamond table and a substrate to a second high-pressure/high-temperature process under diamond-stable temperature-pressure conditions effective to at least partially infiltrate the at least partially leached polycrystalline diamond table with an alloy infiltrant comprising a cobalt-boron-silicon alloy infiltrant;
• and
• wherein:
• infiltration of the cobalt-boron-silicon alloy infiltrant is only partially complete so that the polycrystalline diamond table includes a first region adjacent to the substrate that includes the cobalt-boron-silicon alloy infiltrant disposed in at least a portion of the interstitial regions thereof, and a second region extending inwardly from an exterior surface that is substantially free of the cobalt-boron-silicon alloy infiltrant;
• and
• the second region includes a second infiltrant, the second infiltrant including one or more of copper, tin, germanium, gadolinium, magnesium, lithium, silicon, silver, zinc, gallium, antimony, bismuth, alloys of any of the foregoing, or combinations of any of the foregoing.