Amorphous silicon crystallizing method, crystallized silicon film forming method, semiconductor device manufacturing method and film forming apparatus
AssigneeTokyo Electron Limited
InventorsKazuya Takahashi, Yoshikazu Furusawa, Mitsuhiro Okada, Hiromasa Yonekura
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Abstract
There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystallize silicones contained in at least the second amorphous silicon film.
Claims8
A method of forming a crystallized silicon film by crystallization of amorphous silicones, comprising:
- supplying a silicon raw material gas including an organic silicon compound onto a surface to be processed of an object to be processed;
- supplying another silicon raw material gas excluding the organic silicon compound onto the surface to be processed;
- and
- performing a crystallization treatment on amorphous silicon films formed on the surface to be processed to crystallize amorphous silicones contained in the amorphous silicon films.
A method of forming a crystallized silicon film by crystallization of amorphous silicones, comprising:
- supplying a silicon raw material gas and a gas containing an impurity for suppressing the crystallization of the amorphous silicones onto a surface to be processed of an object to be processed;
- after supplying the silicon raw material gas and the gas containing the impurity, supplying only the silicon raw material gas onto the surface to be processed;
- and
- after supplying only the silicon raw material gas, performing a crystallization treatment on amorphous silicon films formed on the surface to be processed to crystallize the amorphous silicones contained in the amorphous silicon films.
Dependencies are inferred from the claim text.