Deposition of titanium nanolaminates for use in integrated circuit fabrication

A process for depositing a titanium nanolaminate thin film on a substrate in a reaction chamber by an atomic layer deposition (ALD) process comprising at least one supercycle, the supercycle comprising:

• a first titanium material deposition process comprising at least one cycle, the cycle comprising:
• alternately and sequentially contacting the substrate with a first vapor phase titanium precursor and a first reactant;
• and
• a second titanium oxide layer deposition process comprising at least one cycle, the cycle comprising:
• alternately and sequentially contacting the substrate with a second vapor phase titanium precursor and a second reactant comprising oxygen;
• wherein the second titanium oxide is a different material from the first titanium material;
• and
• repeating at least the first titanium material deposition process until a titanium nanolaminate thin film of a desired thickness is formed, wherein the titanium nanolaminate film comprises multiple alternating layers of the first titanium material and the second different titanium material.