Substrate processing apparatus, apparatus for manufacturing semiconductor device, and gas supply system

An apparatus for manufacturing a semiconductor device, comprising:

• a process chamber configured to accommodate a substrate therein;
• a first process gas supply system configured to supply a first process gas containing silicon and a halogen element to the substrate existing within the process chamber;
• a second process gas supply system configured to supply a second process gas containing silicon and not containing a halogen element to the substrate existing within the process chamber;
• a third process gas supply system configured to supply a third process gas containing silicon to the substrate existing within the process chamber;
• a heater configured to heat the substrate existing within the process chamber;
• and
• a control part configured to control the first process gas supply system, the second process gas supply system, the third process gas supply system and the heater so as to perform processes of alternately performing supplying the first process gas to the substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying the second process gas to the substrate, and supplying the third process gas to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.

A gas supply system comprising:

• a first gas supply part configured to supply a first process gas containing silicon and a halogen element to a substrate;
• a second gas supply part configured to supply a second process gas containing silicon and not containing a halogen element to the substrate;
• and
• a third gas supply part configured to supply a third process gas containing silicon to the substrate,
• wherein the first gas supply part, the second gas supply part and the third gas supply part are controlled so as to perform processes of alternately performing supplying the first process gas to the substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying the second process gas to the substrate, and supplying the third process gas to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.