Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus and recording medium
AssigneeHitachi Kokusai Electric Inc.
InventorsKenji Kameda, Jun Sonobe, Yudai Tadaki
Life of this patent
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Abstract
A cleaning method includes: providing a process container in which a process of forming a film on a substrate is performed; and removing a deposit including the film adhered to the process container by supplying a cleaning gas into the process container after performing the process. The act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixture and reaction of the fluorine-containing gas and a nitrogen monoxide gas in a mixture part and supplying the mixture gas from the mixture part into the process container after removing exothermic energy generated by the reaction.
Claims14
A cleaning method for a process container in which a process of forming a film on a substrate is performed, the method comprising:
- removing a deposit including the film adhered to an interior of the process container by supplying a cleaning gas into the process container after performing the process of forming a film,
- wherein the act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixing and reacting the fluorine-containing gas and a nitrogen monoxide gas in a mixture part, removing exothermic energy generated from the reaction of the fluorine-containing gas and the nitrogen monoxide gas by cooling at least one of the mixture part and a downstream side of the mixture part, and supplying the mixture gas from the mixture part into the process container after the cooling, and
- wherein the act of removing the exothermic energy is intended to reduce introduction of particles into or production of particles within the process container that may lead to product defects.
A method of manufacturing a semiconductor device, comprising:
- performing a process of forming a film on a substrate in the process container;
- and
- removing a deposit including the film adhered to an inside of the process container by supplying a cleaning gas into the process container after performing the process,
- wherein the act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixing and reacting the fluorine-containing gas and a nitrogen monoxide gas in a mixture part, removing exothermic energy generated from the reaction of the fluorine-containing gas and the nitrogen monoxide by cooling at least one of the mixture part and a downstream side of the mixture part, and supplying the mixture gas from the mixture part into the process container after the cooling, and
- wherein the act of removing the exothermic energy is intended to reduce introduction of particles into or production of particles within the process container that may lead to product defects.
A substrate processing apparatus comprising:
- a process container in which a process of forming a film on a substrate is performed;
- a fluorine-containing gas supply system configured to supply a fluorine-containing gas;
- a nitrogen monoxide gas supply system configured to supply a nitrogen monoxide gas;
- a mixture part configured to mix and react the fluorine-containing gas with the nitrogen monoxide gas;
- an energy removal mechanism configured to remove exothermic energy generated from the reaction of the fluorine-containing gas and the nitrogen monoxide gas by cooling at least one of the mixture part and a downstream side of the mixture part;
- and
- a control part configured to control the fluorine-containing gas supply system, the nitrogen monoxide gas supply system and the energy removal mechanism to generate a mixture gas of the fluorine-containing gas and a nitrosyl fluoride gas as a cleaning gas by mixture and reaction of the fluorine-containing gas supplied from the fluorine-containing gas supply system and the nitrogen monoxide gas supplied from the nitrogen monoxide gas supply system in the mixture part and supply the mixture gas from the mixture part into the process container after removing exothermic energy generated from the reaction by means of the energy removal mechanism, such that a deposit including the film adhered to an interior of the process container is removed, while the energy removal mechanism for removing the exothermic energy is intended to reduce introduction of particles into or production of particles within the process container that may lead to product defects.
A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of:
- performing a process of forming a film on a substrate in a process container;
- and
- removing a deposit including the film adhered to an interior of the process container by supplying a cleaning gas into the process container after performing the film forming process,
- wherein the act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixing and reacting the fluorine-containing gas and a nitrogen monoxide gas in a mixture part, removing exothermic energy generated from the reaction by cooling at least one of the mixture part and a downstream side of the mixture part, and supplying the mixture gas from the mixture part into the process container after the cooling, and wherein the act of removing the exothermic energy is intended to reduce introduction of particles into or production of particles within the process container that may lead to product defects.
Dependencies are inferred from the claim text.