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US 9,540,286 B2Granted
High pressure low temperature hot pressing method for producing a zirconium carbide ceramic
AssigneeU.S. Department of Energy
InventorBrian V. Cockeram
Life of this patent
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Abstract
A method for producing monolithic Zirconium Carbide (ZrC) is described. The method includes raising a pressure applied to a ZrC powder until a final pressure of greater than 40 MPa is reached; and raising a temperature of the ZrC powder until a final temperature of less than 2200° C. is reached.
Claims3
A method of producing hot-pressed monolithic ZrC, comprising:
- raising a pressure applied to a powder consisting of ZrC of 99.5% purity until a final pressure of 40 to 60 MPa is reached;
- raising a temperature of the ZrC powder until a final temperature between 1800 and 2200° C. is reached;
- placing the ZrC powder and an inert gas into a container;
- forming a grain size of the monolithic ZrC of less than 12 microns;
- and
- compressing the monolithic ZrC to 96%-98% of a theoretical density, wherein the raising the pressure further comprises:
- raising the pressure at a first rate until a first pressure is reached;
- maintaining the first pressure;
- raising the pressure at a second rate until a second pressure is reached;
- raising the pressure at a third rate until a third pressure is reached;
- and
- raising the pressure at a fourth rate until the final pressure is reached.
9 more elements
Dependencies are inferred from the claim text.