Conductive paste and method for producing a semiconductor device using the same

Abstract

A conductive paste including (A) conductive particles, (B) a glass frit containing substantially no lead, arsenic, tellurium, and antimony, and (C) a solvent. The glass frit (B) has a remelting temperature of 320 to 360° C., wherein the remelting temperature is indicated by a peak top of at least one endothermic peak having an endotherm of 20 J/g or more in a DSC curve as measured by a differential scanning calorimeter. The conductive paste can also include at least one metal oxide (D) selected from the group consisting of tin oxide, zinc oxide, indium oxide, and copper oxide. The glass frit (B) can further include (B-1) Ag2O, (B-2) V2O5, and (B-3) MoO3. The conductive paste can achieve binding at a relatively low temperature (such as 370° C. or lower) and maintains a bond strength at a relatively high temperature (such as 300 to 360° C.).

Dependencies are inferred from the claim text.