Nanogap device and method of processing signal from the nanogap device
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-seung Lee, Yong-sung Kim, Jeo-young Shim, Joo-ho Lee
Life of this patent
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Abstract
A nanogap device which may include a first insulation layer having a nanopore formed therein, a first channel layer which may be on the first insulation layer, a first source electrode and a first drain electrode which may be respectively in contact with both ends of the first channel layer, a second insulation layer which may cover the first channel layer, the first source electrode, and the first drain electrode, and a first nanogap electrode which may be on the second insulation layer and may be divided into two parts with a nanogap, which faces the nanopore, interposed between the two parts.
Claims22
A nanogap device comprising:
- a first insulation layer having a nanopore therein;
- a first channel layer on the first insulation layer;
- a first source electrode and a first drain electrode respectively in contact with both ends of the first channel layer;
- a second insulation layer covering the first channel layer, the first source electrode, and the first drain electrode;
- and
- a first nanogap electrode on the second insulation layer and divided into a first part and a second part arranged in a first direction and spaced apart from each other by a nanogap, the nanogap facing the nanopore,
- wherein the first source electrode and the first drain electrode face the first part of the first nanogap electrode, and are arranged along a second direction different from the first direction.
A nanogap device comprising:
- a first insulation layer having a nanopore therein;
- a first channel layer on the first insulation layer;
- a first source electrode in contact with a first end of the first channel layer and a first drain electrode in contact with a second end of the first channel layer;
- a second insulation layer covering the first channel layer, the first source electrode, and the first drain electrode;
- a first nanogap electrode on the second insulation layer and divided into two parts by a nanogap, the nanogap facing the nanopore;
- a first protection layer on the first nanogap electrode;
- a second nanogap electrode on the first protection layer and divided into two parts by a nanogap, the nanogap facing the nanopore;
- a third insulation layer on the second nanogap electrode;
- a second channel layer on the third insulation layer;
- and
- a second source electrode in contact with a first end of the second channel layer and a second drain electrode in contact with a second end of the second channel layer.
Dependencies are inferred from the claim text.