MEMS device with a bonding layer embedded in the cap
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKai-Fung Chang, Lien-Yao Tsai, Len-Yi Leu
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Abstract
Embodiments of a semiconductor device structure are provided. The semiconductor device structure includes a cap structure. The cap structure includes: a first bonding layer and a cap substrate, and the first bonding layer is embedded in the cap substrate. The semiconductor device structure also includes a substrate structure. The substrate structure includes a substrate and a second bonding layer formed on the substrate. The substrate includes a micro-electro-mechanical system (MEMS) substrate or a semiconductor substrate. The cap structure is bonded to the substrate structure by bonding the first bonding layer and the second bonding layer.
Claims20
A semiconductor device structure, comprising:
- a substrate, wherein the substrate comprises a micro electro mechanical system (MEMS) substrate or a semiconductor substrate;
- a cap substrate disposed above the substrate, wherein the cap substrate comprises an extending portion extending from a bottom surface of the cap substrate towards the substrate;
- an eutectic alloy formed between the cap structure and the substrate, wherein at least two of the outer sidewalls of the eutectic alloy are in direct contact with the cap substrate;
- and
- a bonding layer formed between the cap structure and the substrate, wherein the bonding layer is in contact with the extending portion and the substrate,
- wherein the eutectic alloy is made of a first material and a second material, and the bonding layer is made of one of the first material and the second material.
A semiconductor device structure, comprising:
- a semiconductor substrate having a top surface and a bottom surface;
- a micro-electro-mechanical system (MEMS) substrate formed on the top surface of the semiconductor substrate, wherein the MEMS substrate has a first surface and a second surface, and the second surface is in contact with the top surface of the semiconductor substrate;
- and
- a cap substrate formed on the top surface of the semiconductor substrate or the first surface of the MEMS substrate, wherein the cap substrate has an extending portion extending from a bottom surface of the cap substrate towards the semiconductor substrate;
- an eutectic alloy formed between the cap substrate and the MEMS substrate or between the cap substrate and the semiconductor substrate, wherein at least two of the outer sidewalls of the eutectic alloy are in direct contact with the cap substrate;
- and
- a bonding layer formed between the cap substrate and the MEMS substrate or between the cap substrate and the semiconductor substrate, wherein the bonding layer is in contact with the extending portion and one of the MEMS substrate and the cap substrate,
- wherein the eutectic alloy is made of a first material and a second material, and the bonding layer is made of one of the first material and the second material.
A semiconductor device structure, comprising:
- a semiconductor substrate;
- a MEMS substrate formed over the semiconductor substrate;
- a cap substrate formed over the MEMS structure, wherein the cap substrate comprises an extending portion extending from a bottom surface of the cap substrate towards the semiconductor substrate;
- an eutectic alloy formed between the cap substrate and the MEMS substrate, wherein at least two of the outer sidewalls of the eutectic alloy are in direct contact with the cap substrate;
- and
- a bonding layer formed between the cap substrate and the MEMS substrate, wherein the bonding layer is in contact with the extending portion and the MEMS substrate, the eutectic alloy is made of a first material and a second material, and the bonding layer is made of one of the first material and the second material.
Dependencies are inferred from the claim text.