Composite polishing layer chemical mechanical polishing pad

A chemical mechanical polishing pad, comprising:

• a polishing layer having a polishing surface, a base surface and an average thickness, TP-avg, measured normal to the polishing surface from the base surface to the polishing surface;
• wherein the polishing layer comprises a first continuous non-fugitive polymeric phase and a second continuous non-fugitive polymeric phase;
• wherein the first continuous non-fugitive polymeric phase has a plurality of interconnected periodic recesses having an average recess depth, Davg, from the polishing surface measured normal to the polishing surface from the polishing surface toward the base surface;
• wherein the average recess depth, Davg, is less than the average thickness, TP-avg;
• wherein the plurality of interconnected periodic recesses are occupied with the second continuous non-fugitive polymeric phase;
• wherein the first continuous non-fugitive polymeric phase has an open cell porosity of ≦6 vol %;
• wherein the first continuous non-fugitive polymeric phase has a plurality of hollow core polymeric materials;
• wherein the plurality of hollow core polymeric materials is incorporated in the first continuous non-fugitive polymeric phase at 1 to 58 vol %;
• wherein the second continuous non-fugitive polymeric phase contains an open cell porosity of ≧10 vol %;
• wherein the second continuous non-fugitive polymeric phase occupying the plurality of interconnected periodic recesses has an average height, Havg, measured normal to the polishing surface from the base surface of the polishing layer toward the polishing surface;
• wherein an absolute value of a difference, ΔS, between the average thickness, TP-avg, and the average height, Havg, is ≦0.5 μm;
• and, wherein the polishing surface is adapted for polishing a substrate.