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AssigneeTanaka Kikinzoku K.K.
InventorsMasayuki Miyairi, Nobuyuki Akiyama, Katsuji Inagaki, Toshinori Ogashiwa
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A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 μm, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more.
A precious metal paste for bonding a semiconductor element, the paste consisting essentially of either a precious metal powder and an organic solvent, or a precious metal powder, an organic solvent and surfactant, and not containing any resin, wherein the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 μm, and the oranic solvent has a boiling point of 200 to 350° C., wherein the organic solvent is made of two organic solvents, which two organic solvents are a monocyclic monoterpene alcohol and a bicyclic monoterpene alcohol each having a carbon number of 5 to 20, and wherein the precious metal paste has a thixotropy index (TI) value of 6.1 or more, of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer, and a viscosity at a shear rate of 4/s which is 100 to 1000 Pa·s.
Dependencies are inferred from the claim text.