Methods for in-situ chamber clean utilized in an etching processing chamber

A method for in-situ chamber dry cleaning a processing chamber, comprising:

• supplying a first cleaning gas including a mixture of a BH3 or B2H6 gas and a CF4 gas into a processing chamber in absence of a substrate disposed therein to remove a Ta containing material or a Ti containing material present in the processing chamber, wherein a ratio of the boron containing gas to the fluorine containing gas is controlled at between about 1:0.5 and about 1:5;
• subsequently switching the first cleaning gas to a second cleaning gas including at least a halogen containing gas into the processing chamber in absence of the substrate to continue removing the Ta containing material or the Ti containing material remaining in the processing chamber;
• and
• subsequently switching the second cleaning gas to a third cleaning gas including a mixture of at least an oxygen containing gas and a fluorine into the processing chamber in absence of the substrate to continue removing the Ta containing material or the Ti containing material remaining in the processing chamber.

A method for in-situ chamber dry cleaning a processing chamber, comprising:

• supplying a first gas including a mixture of at least a BH3 or B2H6 gas and a CF4 gas into the processing chamber to remove a Ta containing material or a Ti containing material present in the processing chamber;
• subsequently switching the first gas to a second gas including at least a Cl2 gas into the processing chamber to continue removing the Ta containing material or the Ti containing material remaining in the processing chamber;
• and
• subsequently switching the second gas to a third gas including a mixture of at least an O2 gas and CF4 gas into the processing chamber to continue removing the Ta containing material or the Ti containing material remaining in the processing chamber.