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US 9,525,148 B2Granted
Device including quantum dots
AssigneeQd Vision, Inc.
InventorsPeter T. Kazlas, Zhaoqun Zhou, Yuhua Niu, Sang-Jin Kim, Benjamin S. Mashford
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AssigneeQd Vision, Inc.
InventorsPeter T. Kazlas, Zhaoqun Zhou, Yuhua Niu, Sang-Jin Kim, Benjamin S. Mashford
Estimating the term…
A device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a first electrode and a second electrode, a layer comprising quantum dots disposed between the first electrode and the second electrodes, and a first interfacial layer disposed at the interface between a surface of the layer comprising quantum dots and a first layer in the device. In certain embodiments, a second interfacial layer is optionally further disposed on the surface of the layer comprising quantum dots opposite to the first interfacial layer. In certain embodiments, a device comprises a light-emitting device. Other light emitting devices and methods are disclosed.
A light emitting device including a first electrode and a second electrode, an emissive layer comprising quantum dots disposed between the first and second electrodes, a first layer comprising a first charge transport material comprising an inorganic material disposed between the first electrode and the emissive layer, and a first interfacial layer disposed between the emissive layer and the first layer, wherein the first interfacial layer protects quantum dots from charge quenching sites in a contiguous device layer and is a distinct layer, the first interfacial layer comprising a material that is non-quenching to quantum dot photoluminescent emission and does not impede charge flow, wherein the inorganic material comprises a metal chalcogenide, and wherein the first interfacial layer has a thickness in a range from a monolayer thickness to about 5 nm.
A light emitting device including a first electrode and a second electrode, an emissive layer comprising quantum dots disposed between the first and second electrodes, a first layer comprising a first charge transport material comprising an inorganic material disposed between the first electrode and the emissive layer, and a first interfacial layer disposed between the emissive layer and the first layer, wherein the first interfacial layer protects quantum dots from charge quenching sites in a contiguous device layer and is a distinct layer, the first interfacial layer comprising a material that is non-quenching to quantum dot photoluminescent emission and does not impede charge flow, wherein the first interfacial layer comprises a metal oxide including an alkali metal or alkaline earth metal dopant.
Dependencies are inferred from the claim text.