# US 9,521,794 B2 · Method for producing a microelectronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,521,794 B2 - Document ID: US9521794B2 - Status: Granted - Kind: B2 - Application number: 14/193,291 - Filed: 2014-02-28 - Published: 2014-08-28 - Granted: 2016-12-13 - Earliest claimed: 2013-02-28 - Assignees: Commissariat A L'energie Atomique Et Aux Energies Alternatives - Applicants: Commissariat A L'energie Atomique Et Aux Ene Alt - Inventors: Henri Sibuet - Web page: https://patentgrep.com/patent/US9521794B2 ## CPC - H05K 13/046: {Surface mounting (surface mounted components H05K3/341)} - H10D 1/042: {using deposition processes to form electrode extensions} - H10D 1/716: {having vertical extensions} - H10W 20/496: {Capacitor integral with wiring layers} - H10D 89/00: Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00 - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A method for producing a microelectronic device including a substrate and a stack having at least one electrically conductive layer and at least one dielectric layer. The method includes formation, from one face of the substrate, of at least one pattern that is in depression with respect to a plane of the face of the substrate, the wall of the pattern having a bottom part and a flank part, the flank part being situated between the bottom part and the face of the substrate, the flank part having at least one inclined wall as far as the face of the substrate. With formation of the stack, the layers of the stack helping at least partially fill in the pattern. The stack is thinned of the stack at least as far as the plane of the face of the substrate so as to completely expose the edge of said at least one electrically conductive layer flush in one plane, and at least one electrical connection member is formed on the substrate in contact with the edge of the at least one electrically conductive layer. ## Claims ### Claim 1 A method for producing a microelectronic device comprising a substrate and a stack comprising at least one electrically conductive layer and at least one dielectric layer, the method comprising the following steps: forming, from one face of the substrate, at least one pattern in depression with respect to a plane of the face of the substrate, a wall of the pattern comprising a bottom part and a flank part, the flank part being situated between the bottom part and the face of the substrate, the flank part comprising at least one inclined wall as far as the face of the substrate, forming the stack, layers of the stack at least partially filling in the pattern, the forming of the stack being performed over the entire surface of the face of the substrate, thinning the stack at least as far as the plane of the face of the substrate so as to completely expose opposing edges of each of said at least one electrically conductive layer flush in one plane, after the thinning, forming at least one electrical connection member on the substrate in contact with one of the opposing edges of said at least one electrically conductive layer while completely leaving the one of the opposing edges of said at least one electrically conductive layer flush in said plane, wherein the step of forming an electrical connection member comprises: depositing an electrically insulating material on said one of the opposing edges of the electrically conductive layer of the stack, forming at least one opening in the electrically insulating material to provide an electrical contact point on said one of the opposing edges; and depositing an electrically conductive material to form the electrical connection member, said deposition being configured so as to pass through the at least one opening. ### Claim 2 (depends on 1) A method according to claim 1, wherein, the face of the substrate is electrically conductive, the stack is formed on the substrate with successively at least one alternation of an insulating layer and an electrically conductive layer. ### Claim 3 (depends on 1) A method according to claim 1, wherein the wall of the pattern is electrically insulating, and the stack is formed on the substrate with successively at least one alternation of an electrically conductive layer, a dielectric layer and an electrically conductive layer. ### Claim 4 (depends on 1) A method according to claim 1, in which the at least one inclined wall is formed from a flat surface. ### Claim 5 (depends on 1) A method according to claim 1, wherein the angle formed between the at least one inclined wall and the plane of the face of the substrate is selected as between 30° and 90°. ### Claim 6 (depends on 1) A method according to claim 1, wherein the step of forming at least one opening comprises forming said at least one opening in the electrically insulating material by photography and etching. ### Claim 7 (depends on 6) A method according to claim 6, wherein the stack comprises two electrically conductive layers spaced apart by a dielectric layer, the at least one opening being configured so as to provide a contact point on the edge of a first of the two electrically conductive layers without providing a contact point on a second one of the two electrically conductive layers. ### Claim 8 (depends on 7) A method according to claim 7, further comprising forming a second opening configured to provide a contact point on the edge of the second of the two electrically conductive layers without providing electrical connection with said contact point on the first of the two electrically conductive layers. ### Claim 9 (depends on 1) A method according to claim 1, comprising, before forming the stack, and after form ng the in depression pattern, forming a dielectric layer finalizing the substrate. ### Claim 10 (depends on 1) A method according to claim 1, wherein the step of forming the pattern comprises a step of etching the substrate. ### Claim 11 (depends on 1) A method according to claim 1, further comprising for manufacturing a multilayer capacitive device from said microelectronic device. ### Claim 12 (depends on 1) A method according to claim 1, further comprising manufacturing a device for routing and/or for providing an electrical supply of a component from said microelectronic device. ### Claim 13 (depends on 1) A method according to claim 1, wherein the thinning step comprises a levelling. ### Claim 14 (depends on 1) The method of claim 1, wherein said thinning the stack comprises completely exposing all edges of said at least one electrically conductive layer flush in one plane. ### Claim 15 (depends on 1) The method of claim 1, wherein said thinning the stack exposes the entire border of each layer in the stack, said border forming an exposed closed outline.