# US 9,521,341 B2 · Image sensors and image capturing apparatus including the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,521,341 B2 - Document ID: US9521341B2 - Status: Granted - Kind: B2 - Application number: 14/574,463 - Filed: 2014-12-18 - Published: 2015-07-09 - Granted: 2016-12-13 - Earliest claimed: 2014-01-09 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Eun-sub Shim; Seung-sik Kim; Kang-sun Lee; Moo-sup Lim - Web page: https://patentgrep.com/patent/US9521341B2 ## CPC - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H04N 9/01: Circuitry for demodulating colour component signals modulated spatially by colour striped filters by phase separation - H04N 23/10: for generating image signals from different wavelengths - H04N 25/134: {based on three different wavelength filter elements} - H04N 25/703: SSIS architectures incorporating pixels for producing signals other than image signals - H04N 25/704: Pixels specially adapted for focusing, e.g. phase difference pixel sets - H10F 39/182: {Colour image sensors} - H10F 39/199: {Back-illuminated image sensors} - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/8053: {Colour filters} - H10F 39/8057: {Optical shielding} - H10F 39/8063: {Microlenses} - H10F 39/811: {Interconnections} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract Provided are an image sensor and an image capturing apparatus including the image sensor. The image sensor includes a pixel array including: multiple sensing pixels outputting image signals respectively corresponding to intensities of incident light; and at least one pair of focusing pixels that are adjacent each other, and each outputting a phase difference of the incident light as a focusing signal; wherein each focusing pixel includes: a semiconductor layer including a photodetecting device accumulating electric charges generated according to absorbed light from among the incident light; a wiring layer formed on a first surface of the semiconductor layer and including wirings; a planarization layer having a first surface on a second surface of the semiconductor layer; a shielding layer formed in the planarization layer to block some of the incident light to be incident to the photodetecting device; and a color filter layer and a micro lens layer. ## Claims ### Claim 1 An image sensor comprising: a pixel array comprising: a plurality of sensing pixels configured to output image signals respectively corresponding to intensities of incident light; and at least two focusing pixels that are adjacent one another, and each outputting a phase difference of the incident light as a focusing signal; wherein each of the at least two focusing pixels comprises: a semiconductor layer including a photodetecting device accumulating electric charges generated according to absorbed light from among the incident light; a wiring layer on a first surface of the semiconductor layer and including wirings; a planarization layer on a second surface of the semiconductor layer and having a first surface; a shielding layer in the planarization layer to block a portion of the incident light to be received by the photodetecting device; and a color filter layer and a micro lens layer on a second surface of the planarization layer that is opposite the first surface of the planarization layer, wherein the color filter layer is configured to selectively transmit the incident light according to a wavelength of the incident light and the micro lens layer is configured to selectively focus the incident light onto the photodetecting device, and wherein the shielding layer is in the planarization layer in contact with the first surface of the planarization layer or the second surface of the planarization layer. ### Claim 2 (depends on 1) The image sensor of claim 1, wherein the shielding layer comprises metal. ### Claim 3 (depends on 1) The image sensor of claim 1, wherein the shielding layer is in the planarization layer apart from the first and second surfaces of the planarization layer. ### Claim 4 (depends on 1) The image sensor of claim 1, wherein the pixel array includes a Bayer pattern, and the at least two focusing pixels are formed on a red (R) region or a blue (B) region of the Bayer pattern. ### Claim 5 (depends on 4) The image sensor of claim 4, wherein the shielding layers respectively comprised in the at least two focusing pixels are adjacent one another in a first direction. ### Claim 6 (depends on 4) The image sensor of claim 4, wherein the shielding layers respectively comprised in the at least two focusing pixels are adjacent one another in a second direction that is perpendicular to a first direction. ### Claim 7 (depends on 4) The image sensor of claim 4, wherein the shielding layers respectively comprised in the at least two focusing pixels are spaced apart from one another in a first direction. ### Claim 8 (depends on 4) The image sensor of claim 4, wherein the shielding layers respectively comprised in the at least two focusing pixels are spaced apart from one another in a second direction that is perpendicular to a first direction. ### Claim 9 (depends on 1) The image sensor of claim 1, further comprising: a row driver configured to apply a row signal to the pixel array; and a pixel signal processing unit configured to receive an image signal and/or a focusing signal from sensing pixels among the plurality of sensing pixels and/or focusing pixels among the plurality of focusing pixels that are activated by the row signal and processing the image signal or the focusing signal. ### Claim 10 (depends on 9) The image sensor of claim 9, wherein the pixel signal processing unit comprises: a storage unit configured to store location information representing locations of the at least two focusing pixels; and a comparison unit for comparing output voltages output from the at least two focusing pixels based on the location information, and processing a comparison result as the focusing signal. ### Claim 11 (depends on 1) The image sensor of claim 1, wherein the image sensor is configured as a chip. ### Claim 12 An image capturing apparatus comprising: a lens that focuses light reflected from a subject; and an image sensor of a backside illumination (BSI) type that outputs an electrical signal corresponding to the light incident to the lens and comprises a pixel array comprising a plurality of pixels, each having a wiring layer that is located on a lower surface of a semiconductor layer including a photodetecting device and in an incident direction of the light, wherein the pixel array comprised in the image sensor of the BSI type comprises: a plurality of sensing pixels configured to output image signals respectively corresponding to intensities of incident light; and at least two focusing pixels that are adjacent one another, each outputting a phase difference of the incident light as a focusing signal, and including a shielding layer that blocks a portion of incident light to be incident to the photodetecting device in order to detect a phase difference of the incident light on an upper surface of the semiconductor layer, wherein each of the at least two focusing pixels comprises a planarization layer on a surface of the semiconductor layer and having a first surface on the surface of the semiconductor layer, and wherein the shielding layer is in the planarization layer apart from the first surface of the planarization layer. ### Claim 13 (depends on 12) The image sensor of claim 12, wherein the shielding layer comprises metal. ### Claim 14 (depends on 12) The image sensor of claim 12, wherein the shielding layer is formed to have a cross-sectional area that is less than a cross-sectional area of each of the at least two focusing pixels, and wherein the planarization layer compensates for a step generated due to the shielding layer. ### Claim 15 An image sensor comprising: a pixel array including a plurality of sensing pixels configured to output image signals respectively corresponding to intensities of incident light and at least two focusing pixels that are adjacent one another and are each configured to output a phase difference of the incident light as a focusing signal, wherein each of the at least two focusing pixels comprises: a semiconductor layer including a photodetecting device accumulating electric charges generated according to absorbed light from among the incident light; a planarization layer on a surface of the semiconductor layer and having a first surface on the surface of the semiconductor layer; a shielding layer in the planarization layer to block a portion of the incident light to be received by the photodetecting device; and a color filter layer on a second surface of the planarization layer, wherein the color filter layer is configured to selectively transmit the incident light according to a wavelength of the incident light, wherein the at least two focusing pixels comprise a first focusing pixel, a second focusing pixel, a third focusing pixel and a fourth focusing pixel, wherein the first focusing pixel is adjacent the second focusing pixel and the third focusing pixel is adjacent the fourth focusing pixel, wherein the shielding layers respectively comprised in the first and second focusing pixels are spaced apart from one another in a first direction, and wherein the shielding layers respectively comprised in the third and fourth focusing pixels are spaced apart from one another in a second direction that is substantially perpendicular to the first direction. ### Claim 16 (depends on 15) The image sensor of claim 15, wherein a portion of the planarization layer is between the shielding layer and the semiconductor layer. ### Claim 17 (depends on 15) The image sensor of claim 15, wherein the pixel array includes a Bayer pattern, and the at least two focusing pixels are formed on a red (R) region or a blue (B) region of the Bayer pattern. ### Claim 18 (depends on 15) The image sensor of claim 15, wherein the at least two focusing pixels comprise a first focusing pixel, a second focusing pixel, a third focusing pixel and a fourth focusing pixel, wherein the first focusing pixel is adjacent the second focusing pixel and the third focusing pixel is adjacent the fourth focusing pixel, wherein the shielding layers respectively comprised in the first and second focusing pixels are adjacent one another in a first direction, and wherein the shielding layers respectively comprised in the third and fourth focusing pixels are adjacent one another in a second direction that is substantially perpendicular to the first direction.