# US 9,520,873 B2 · Semiconductor device and electronic device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 9,520,873 B2
- Document ID: US9520873B2
- Status: Granted
- Kind: B2
- Application number: 14/818,588
- Filed: 2015-08-05
- Published: 2016-02-11
- Granted: 2016-12-13
- Earliest claimed: 2014-08-08
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., LTD.
- Inventors: Yoshiyuki Kurokawa; Takayuki Ikeda
- Web page: https://patentgrep.com/patent/US9520873B2

## CPC

- H03K 17/687: the devices being field-effect transistors
- H03K 19/0013: {in field effect transistor circuits}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 84/08: using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 88/00: Three-dimensional [3D] integrated devices
- H10W 42/00: Arrangements for protection of devices (arrangements for thermal protection H10W40/00)
- H03K 2217/0027: Measuring means of, e.g. currents through or voltages across the switch
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device having excellent data retention characteristics. A transistor with a low off-state current is utilized to save and retain data stored in a memory circuit, and a potential to be applied to a back gate of the transistor is applied from a battery provided for each memory circuit. The potential applied to the back gate of the transistor and a potential for charging the battery are generated in a voltage generation circuit. The battery is charged utilizing power gating of the memory circuit and data retention characteristics is improved.

## Claims

### Claim 1

A semiconductor device comprising:
a first circuit configured to retain data;
a second circuit comprising:
a first transistor comprising a first gate, a second gate, a source, and a drain; and
a second transistor comprising a gate,
wherein the gate of the second transistor is electrically connected to one of the source and the drain of the first transistor through a node, and
wherein the second circuit is configured to hold charge corresponding to the data in the node;
a battery comprising a first terminal and a second terminal, wherein the second terminal is electrically connected to the second gate of the first transistor;
a voltage generation circuit electrically connected to the second terminal of the battery; and
a switch electrically connected to the first circuit and a wiring,
wherein a first potential is applied to the first circuit through the wiring,
wherein a second potential is applied to the first circuit and the first terminal of the battery,
wherein a third potential is applied to the second gate of the second transistor and the second terminal of the battery, and
wherein the third potential is lower than the second potential.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the second potential is lower than the first potential.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein the voltage generation circuit is configured to generate the third potential by turning off the switch and releasing charge accumulated in the first circuit.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein the voltage generation circuit is configured to generate the third potential by intermittently applying the first potential.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the first circuit is a latch circuit.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein the first transistor comprises an oxide semiconductor film.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein the battery comprises a solid electrolyte.

### Claim 8 (depends on 1)

An electronic device comprising:
the semiconductor device according to claim 1; and
a display device.

### Claim 9

A semiconductor device comprising:
a first circuit configured to retain data;
a second circuit comprising:
a first transistor comprising a first gate, a second gate, a source, and a drain; and
a second transistor comprising a gate,
wherein the gate of the second transistor is electrically connected to one of the source and the drain of the first transistor, and
wherein the second circuit is configured to retain the data stored in the first circuit;
a battery comprising a first terminal and a second terminal, wherein the second terminal of the battery is electrically connected to the second gate of the first transistor;
a voltage generation circuit comprising a first terminal and a second terminal, wherein the second terminal of the voltage generation circuit is electrically connected to the second terminal of the battery and the second gate of the first transistor; and
a switch electrically connected the first circuit, a wiring, and the first terminal of the voltage generation circuit.

### Claim 10 (depends on 9)

The semiconductor device according to claim 9, wherein the voltage generation circuit comprises an oscillator circuit.

### Claim 11 (depends on 9)

The semiconductor device according to claim 9, wherein the first circuit is a latch circuit.

### Claim 12 (depends on 9)

The semiconductor device according to claim 9, wherein the first transistor comprises an oxide semiconductor film.

### Claim 13 (depends on 9)

The semiconductor device according to claim 9, wherein the battery comprises a solid electrolyte.

### Claim 14 (depends on 9)

An electronic device comprising:
the semiconductor device according to claim 9; and
a display device.

### Claim 15

A semiconductor device comprising:
a first circuit configured to retain data during supply of a power supply voltage;
a second circuit comprising:
a first transistor comprising a first gate, a second gate, a source, and a drain; and
a second transistor comprising a gate,
wherein the gate of the second transistor is electrically connected to one of the source and the drain of the first transistor, and
wherein the second circuit is configured to retain the data when the supply of the power supply voltage is stopped,
a battery comprising a first terminal and a second terminal, wherein the second terminal of the battery is electrically connected to the second gate of the first transistor;
a voltage generation circuit comprising a first terminal and a second terminal, wherein the second terminal of the voltage generation circuit is electrically connected to the second terminal of the battery and the second gate of the first transistor; and
a switch electrically connected the first circuit, a wiring, and the first terminal of the voltage generation circuit,
wherein the power supply voltage is supplied by controlling on and off of the switch.

### Claim 16 (depends on 15)

The semiconductor device according to claim 15, wherein the voltage generation circuit comprises an oscillator circuit.

### Claim 17 (depends on 15)

The semiconductor device according to claim 15, wherein the first circuit is a latch circuit.

### Claim 18 (depends on 15)

The semiconductor device according to claim 15, wherein the first transistor comprises an oxide semiconductor film.

### Claim 19 (depends on 15)

The semiconductor device according to claim 15, wherein the battery comprises a solid electrolyte.

### Claim 20 (depends on 15)

An electronic device comprising:
the semiconductor device according to claim 15; and
a display device.