# US 9,520,572 B2 · Electronic device and method of manufacturing semiconductor device

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- Number: US 9,520,572 B2
- Document ID: US9520572B2
- Status: Granted
- Kind: B2
- Application number: 15/051,655
- Filed: 2016-02-23
- Published: 2016-06-16
- Granted: 2016-12-13
- Earliest claimed: 2011-07-04
- Assignees: Sony Corporation
- Applicants: Sony Corporation
- Inventors: Mao Katsuhara
- Web page: https://patentgrep.com/patent/US9520572B2

## CPC

- H10D 30/031: {of thin-film transistors [TFT]}
- H10K 10/462: {Insulated gate field-effect transistors [IGFETs]}
- H10K 10/486: {the channel region comprising two or more active layers, e.g. forming pn heterojunctions}
- H10K 10/488: {the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction}
- H10D 30/0312: {characterised by the gate electrodes}
- H10K 85/611: {Charge transfer complexes}
- H10K 85/653: {comprising only oxygen as heteroatom}
- H10K 85/655: {comprising only sulfur as heteroatom}
- H10K 85/6576: {comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

There is provided an electronic device including at least a first electrode, a second electrode disposed to be spaced apart from the first electrode, and an active layer disposed over the second electrode from above the first electrode and formed of an organic semiconductor material. A charge injection layer is formed between the first electrode and the active layer and between the second electrode and the active layer, and the charge injection layer is formed of an organic material having an increased electric conductivity when the charge injection layer is oxidized.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising:
forming a pair of source/drain electrodes on a base;
forming charge-injection precursor layers of an organic compound on the source/drain electrodes;
performing oxidation on the charge-injection precursor layers to form charge-injection layers having a higher electric conductivity than the charge-injection precursor layers;
forming a channel formation region of an organic semiconductor material between the pair of source/drain electrodes;
forming channel extension regions of the organic semiconductor material above the source/drain electrodes;
forming a gate insulating layer on at least the channel formation region; and
forming a gate electrode on the gate insulating layer.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the oxidation performed on the charge-injection precursor layers is natural oxidation under an air atmosphere.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the charge injection layer includes at least one of tetrathiafulvalene and derivatives thereof, tetrathiapentalene and derivatives thereof, tetrathiatetracene, hexathiopentacene, pyranylidene and derivatives thereof, and bithiapyrinylidene and derivatives thereof.

### Claim 4 (depends on 1)

The method according to claim 1, where in a solvent for preparing the organic semiconductor material solution comprises at least one of:
aromatics which comprises one of toluene, xylene, mesitylene, and tetralin;
ketones which comprises one of cyclopentanone, and cyclohexanone; and
hydrocarbons which comprises decalin.

### Claim 5

A method of manufacturing a semiconductor device, comprising:
forming a pair of source/drain electrodes on a base;
forming charge-injection precursor layers of an organic compound on the source/drain electrodes;
performing oxidation on the charge-injection precursor layers to form charge-injection layers;
forming a channel formation region of an organic semiconductor material between the pair of source/drain electrodes;
forming channel extension regions of the organic semiconductor material above the source/drain electrodes;
forming a gate insulating layer on at least the channel formation region; and
forming a gate electrode on the gate insulating layer,
wherein the organic compound includes at least one organic compound selected from the group consisting of: a Weitz type oxidation-reduction based organic compound, an organic compound having a cyclic structure in which the number of π electrons is 4n+3 (n is a positive integer), an organic compound having a dichalcogen five-membered ring, and an organic compound having a monochalcogen six-membered ring.

### Claim 6

A method of manufacturing a semiconductor device, comprising:
forming a channel formation region and channel extension regions of an organic semiconductor material on a base;
forming charge-injection precursor layers of an organic compound on the channel extension regions;
performing oxidation on the charge-injection precursor layers to form charge-injection layers having a higher electric conductivity than the charge-injection precursor layers;
forming a pair of source/drain electrodes above the channel extension regions and charge-injection layers;
forming a gate insulating layer on at least the channel formation region and the pair of source/drain electrodes; and
forming a gate electrode on the gate insulating layer.