# US 9,520,551 B2 · Hall effect device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,520,551 B2 - Document ID: US9520551B2 - Status: Granted - Kind: B2 - Application number: 14/933,351 - Filed: 2015-11-05 - Published: 2016-02-25 - Granted: 2016-12-13 - Earliest claimed: 2012-09-13 - Assignees: Infineon Tecnologies AG - Applicants: Infineon Technologies AG - Inventors: Stefan Kolb; Markus Eckinger - Web page: https://patentgrep.com/patent/US9520551B2 ## CPC - H10N 52/101: {Semiconductor Hall-effect devices} - G01R 33/0035: {Calibration of single magnetic sensors, e.g. integrated calibration} - G01R 33/0052: {Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips (devices based on galvano-magnetic effect or the like H10N50/85)} - G01R 33/07: Hall effect devices - G01R 33/075: {Hall devices configured for spinning current measurements} - H10B 61/00: Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices - H10N 52/01: Manufacture or treatment - H10N 52/80: Constructional details - H10N 59/00: Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 (MRAM devices H10B61/00) - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) - H10B: ELECTRONIC MEMORY DEVICES ## Abstract A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements. ## Claims ### Claim 1 A Hall effect device, comprising: an active Hall region in a semiconductor substrate, wherein the active Hall region comprises at least three triangular active sub-regions, and at least three terminal structures in each triangular active sub-region, each terminal structure comprising a switchable supply contact element and a sense contact element that are spatially distinct from one another, wherein each switchable supply contact element comprises a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements. ### Claim 2 (depends on 1) The Hall effect device according to claim 1, wherein the sense contact elements and the switchable supply contact elements are formed to be separately connected to the active Hall region. ### Claim 3 (depends on 1) The Hall effect device according to claim 1, wherein the triangular active sub-regions jointly form the resulting active Hall region. ### Claim 4 (depends on 1) The Hall effect device according to claim 1, further comprising: a control circuit for controlling an operation of the Hall effect device. ### Claim 5 (depends on 4) The Hall effect device according to claim 4, wherein the control circuit is configured to apply a different phases of a spinning current operation to the terminal structures at the active Hall region. ### Claim 6 A Hall effect device, comprising: an active Hall region in a semiconductor substrate, wherein the active Hall region comprises at least three triangular active sub-regions, at least three terminal structures in each triangular active sub-region, each terminal structure comprising a switchable supply contact element and a sense contact element, and a control circuit for controlling an operation of the Hall effect device; wherein each supply contact element comprises a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements, wherein the control circuit is configured to apply a different phases of a spinning current operation to the terminal structures at the active Hall region, and wherein the control circuit is configured to selectively switch on one of the supply contact elements for feeding a biasing current in a predetermined current direction through the active Hall region, and to selectively switch off the remaining supply contact elements during each of the different phases of a spinning current operation. ### Claim 7 A Hall effect device, comprising: an active Hall region in a semiconductor substrate, wherein the active Hall region comprises at least three triangular active sub-regions, at least three terminal structures in each triangular active sub-region, each terminal structure comprising a switchable supply contact element and a sense contact element, and a control circuit for controlling an operation of the Hall effect device, wherein each supply contact element comprises a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements, wherein the control circuit is configured to apply a different phases of a spinning current operation to the terminal structures at the active Hall region, and wherein the control circuit is configured to apply a first to fourth phase of the spinning current operation to the terminal structures at the active Hall region, and to continuously cyclically rotate the biasing current direction through the active Hall region and to continuously cyclically rotate the measurement direction for detecting a Hall voltage at the pairs of sense contact elements. ### Claim 8 (depends on 4) The Hall effect device according to claim 4, wherein the control circuit is configured to apply at least one mode of a calibration operation to the terminal structures at the active Hall region. ### Claim 9 (depends on 1) The Hall effect device according to claim 1, wherein the transistor element is a bipolar junction transistor or a field effect transistor. ### Claim 10 (depends on 1) The Hall effect device according to claim 1, wherein the sense contact elements and the switchable supply contact elements are separate contact elements which are directly connected to the active Hall region. ### Claim 11 (depends on 1) The Hall effect device according to claim 1, wherein the second transistor terminals extend in the active Hall region and are part of the active Hall region. ### Claim 12 (depends on 1) The Hall effect device according to claim 1, wherein, in a direction parallel to a flowing direction of a control or biasing current through the active Hall region, the switchable supply contact elements are broader than the sense contact elements. ### Claim 13 (depends on 1) The Hall effect device according to claim 1, wherein the sense contact elements and the switchable supply contact elements are positioned in pairs at the boundary of the triangular active regions.