# US 9,520,546 B2 · Light-emitting diode module having light-emitting diode joined through solder paste and light-emitting diode > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,520,546 B2 - Document ID: US9520546B2 - Status: Granted - Kind: B2 - Application number: 15/186,358 - Filed: 2016-06-17 - Published: 2016-10-06 - Granted: 2016-12-13 - Earliest claimed: 2013-05-01 - Assignees: Seoul Viosys Co., Ltd. - Applicants: Seoul Viosys Co., Ltd. - Inventors: Jong Hyeon Chae; Joon Sup Lee; Daewoong Suh; Won Young Roh; Min Woo Kang; Jong Min Jang - Web page: https://patentgrep.com/patent/US9520546B2 ## CPC - H10H 20/821: of the light-emitting regions, e.g. non-planar junctions - H10H 20/0137: {the light-emitting regions comprising nitride materials} - H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures - H10H 20/831: characterised by their shape - H10H 20/835: {Reflective materials} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/851: Wavelength conversion means - H10H 20/8514: {characterised by their shape, e.g. plate or foil} - H10H 20/856: Reflecting means - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10W 90/00: Package configurations - H10H 20/032: {of electrodes} - H10H 20/034: {of coatings} - H10W 72/07251: {characterised by changes in properties of the bump connectors during connecting} - H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module. ## Claims ### Claim 1 A light emitting diode comprising: a first conductive-type semiconductor layer; a mesa placed on the first conductive-type semiconductor layer, the mesa including an active layer and a second conductive-type semiconductor layer; a reflective electrode structure placed on the mess; a current spreading layer covering the mesa and the first conductive-type semiconductor layer, and including an opening placed in an upper region of the mesa while exposing the reflective electrode structure, the current spreading layer forming ohmic contact with the first conductive-type semiconductor layer and being insulated from the mesa; a lower insulation layer placed between the mesa and the current spreading layer and insulating the current spreading layer from the mesa, the lower insulation layer including an opening placed in the upper region of the mesa and exposing the reflective electrode structure; an upper insulation layer covering at least part of the current spreading layer and including an opening on the reflective electrode structure, wherein the opening of the upper insulation layer is narrower than the opening of the lower insulation layer. ### Claim 2 (depends on 1) The light emitting diode of claim 1, wherein the upper insulation layer covers a sidewall of the opening of the lower insulation layer. ### Claim 3 (depends on 1) The light emitting diode of claim 1, wherein the opening of the upper insulation layer is narrower than the opening of the current spreading layer. ### Claim 4 (depends on 3) The light emitting diode of claim 3, wherein the upper insulation layer covers a sidewall of the opening of the current spreading layer. ### Claim 5 (depends on 1) The light emitting diode of claim 1, wherein the upper insulation layer covers sidewalls of the openings of the current spreading layer and the lower insulation layer. ### Claim 6 (depends on 1) The light emitting diode of claim 1, wherein the opening of the current spreading layer has a greater width than the opening of the lower insulation layer to expose the opening of the lower insulation layer. ### Claim 7 (depends on 1) The light emitting diode of claim 1, wherein the opening of the upper insulation layer exposes the reflective electrode structure. ### Claim 8 (depends on 1) The light emitting diode of claim 1, further comprising: an anti-diffusion reinforcing layer placed on the reflective electrode structure and in the opening of the current spreading layer, wherein the opening of the upper insulation layer exposes the anti-diffusion reinforcing layer. ### Claim 9 (depends on 8) The light emitting diode of claim 8, wherein the anti-diffusion reinforcing layer is formed of the same material as that of the current spreading layer. ### Claim 10 (depends on 8) The light emitting diode of claim 8, wherein the opening of the upper insulation layer is limitedly placed on the anti-diffusion reinforcing layer. ### Claim 11 (depends on 1) The light emitting diode of claim 1, wherein the reflective electrode structure comprises a reflective metal section, a capping metal section, and an oxidation prevention metal section, the reflective metal section having an inclined side surface such that an upper surface of the reflective metal section has a narrower area than a lower surface thereof, the capping metal section covering the upper and side surfaces of the reflective metal section, a stress relief layer being formed at an interface between the reflective metal section and the capping metal section. ### Claim 12 (depends on 1) The light emitting diode of claim 1, further comprising: a first electrode pad electrically connected to the first conductive-type semiconductor layer; and a second electrode pad electrically connected to the second conductive-type semiconductor layer, wherein the first electrode pad and the second electrode pad are disposed on the upper insulation layer, and the second electrode pad is overlapped to the openings of the lower insulation layer, the current spreading layer and the upper insulation layer. ### Claim 13 (depends on 12) The light emitting diode of claim 12, wherein each of the first electrode pad and the second electrode pad comprises a solder barrier layer and an oxidation barrier layer. ### Claim 14 (depends on 13) The light emitting diode of claim 13, wherein the solder barrier layer comprises a metal layer including Cr, Ti, Ni, Mo, TiW or W or a combination of any two of Cr, Ti, Ni, Mo, TiW or W, and the oxidation barrier layer comprises an Au, Ag or organic material layer. ### Claim 15 (depends on 12) The light emitting diode of claim 12, wherein the first electrode pad is connected to the current spreading layer and the second electrode pad is connected to the reflective electrode structure. ### Claim 16 (depends on 12) The light emitting diode of claim 12, further comprising: an anti-diffusion reinforcing layer placed on the reflective electrode structure and in the opening of the current spreading layer, wherein the first electrode pad is connected to the current spreading layer, and the second electrode pad is connected to the anti-diffusion reinforcing layer. ### Claim 17 (depends on 1) The light emitting diode of claim 1, wherein the opening of the current spreading layer is placed to be biased towards an edge of the mesa. ### Claim 18 (depends on 1) The light emitting diode of claim 1, wherein the current spreading layer comprises a reflective metal. ### Claim 19 (depends on 1) The light emitting diode of claim 1, wherein the lower insulation layer comprises a silicon oxide layer and the upper insulation layer comprises a silicon nitride layer. ### Claim 20 (depends on 1) The light emitting diode of claim 1, further comprising: a substrate; and a wavelength converter covering an upper surface of the substrate.