# US 9,520,536 B2 · Light emitting diode chip having electrode pad > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,520,536 B2 - Document ID: US9520536B2 - Status: Granted - Kind: B2 - Application number: 14/984,829 - Filed: 2015-12-30 - Published: 2016-04-28 - Granted: 2016-12-13 - Earliest claimed: 2010-11-18 - Assignees: Seoul Viosys Co., Ltd. - Applicants: Seoul Viosys Co., Ltd. - Inventors: Ye Seul Kim; Kyoung Wan Kim; Yeo Jin Yoon; Sang Hyun Oh; Keum Ju Lee; Jin Woong Lee; Da Yeon Jeong; Sang Won Woo - Web page: https://patentgrep.com/patent/US9520536B2 ## CPC - H10H 20/8162: {Current-blocking structures} - H10H 20/83: Electrodes - H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 20/831: characterised by their shape - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/8314: {extending at least partially onto an outer side surface of the bodies} - H10H 20/833: Transparent materials - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area. ## Claims ### Claim 1 A light emitting diode device comprising: a light emitting structure including a first conductive-type semiconductor layer, a second conductive-type semiconductor layer located over the first conductive-type semiconductor layer, and an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; a transparent conductive layer formed over the second conductive-type semiconductor layer; a second electrode pad formed over the transparent conductive layer; a second electrode extension extending from the second electrode pad; and a current blocking layer interposed between the transparent conductive layer and the second conductive-type semiconductor layer, wherein the transparent conductive layer has an opening exposing at least a portion of the current blocking layer, and the second electrode extension includes a first portion electrically connected to the transparent conductive layer and a second portion electrically insulated from the transparent conductive layer. ### Claim 2 (depends on 1) The light emitting diode device of claim 1, wherein the transparent conductive layer has one or more additional openings that are formed along the second electrode extension and spaced apart from one another. ### Claim 3 (depends on 1) The light emitting diode device of claim 1, wherein the first portion of the second electrode extension is located on the transparent conductive layer, and the second portion of the second electrode extension is located on the current blocking layer exposed through the opening of the transparent conductive layer. ### Claim 4 (depends on 1) The light emitting diode device of claim 1, wherein the opening has a width smaller than that of the current blocking layer. ### Claim 5 (depends on 1) The light emitting diode of claim 1, further comprising a protective insulation layer covering the transparent conductive layer. ### Claim 6 (depends on 1) The light emitting diode of claim 1, further comprising: a first electrode pad formed on the second conductive-type semiconductor layer so as to be opposite to the first conductive-type semiconductor layer; and a first electrode extension extending from the first electrode pad. ### Claim 7 (depends on 1) The light emitting diode of claim 1, wherein the light emitting structure includes a groove penetrating through the second conductive-type semiconductor layer and the active layer to expose the first conductive-type semiconductor layer, and a first electrode extension which is connected to the first conductive-type semiconductor layer through the groove. ### Claim 8 (depends on 7) The light emitting diode of claim 7, wherein the light emitting structure has one or more additional grooves that are arranged along the first electrode extension. ### Claim 9 (depends on 6) The light emitting diode of claim 6, wherein the first electrode extension and the second electrode extension are disposed in parallel with each other, and the opening and the groove are disposed on different horizontal lines from each other. ### Claim 10 (depends on 7) The light emitting diode device of claim 7, wherein the opening is formed to have a length not overlapped with the groove. ### Claim 11 (depends on 6) The light emitting diode device of claim 6, wherein the first electrode extension is formed along an edge of the light emitting diode device. ### Claim 12 (depends on 1) The light emitting diode device of claim 1, wherein the transparent conductive layer includes a metal oxide. ### Claim 13 A light emitting diode device comprising: is a substrate having first and second edge that oppose to each other; a light emitting structure including a first conductive-type semiconductor layer formed over the substrate, a second conductive-type semiconductor layer formed over the first conductive-type semiconductor layer; and an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; a first electrode pad formed over the light emitting structure around the first edge of the substrate; a first electrode extension extending from the first electrode pad; a second electrode pad formed over the light emitting structure around the second edge of the substrate; and a second electrode extension extending from the second electrode pad, wherein along the first electrode extension, first openings are located spaced apart from one another to connect the first electrode extension to the first conductive-type semiconductor layer, and along the second electrode extension, second openings are located spaced apart from one another to cause a current block in the openings and a current crowd between the openings. ### Claim 14 (depends on 13) The light emitting diode device of claim 13, wherein the substrate includes a sapphire substrate. ### Claim 15 (depends on 13) The light emitting diode device of claim 13, wherein the first openings penetrate through the active layer and the second conductive-type semiconductor layer. ### Claim 16 (depends on 13) The light emitting diode device of claim 13, further comprising a transparent conductive layer located over the second conductivity-type semiconductor layer and having a first portion electrically connected to the second electrode extension and a second portion electrically insulated from the second electrode extension. ### Claim 17 (depends on 13) The light emitting diode device of claim 13, further comprising a current blocking layer located between the second conductivity-type semiconductor layer and the second electrode extension. ### Claim 18 (depends on 13) The light emitting diode device of claim 13, further comprising a protective insulation layer covering the transparent conductive layer. ### Claim 19 (depends on 13) The light emitting diode device of claim 13, wherein the first openings and the second openings are positioned on different horizontal lines from each other. ### Claim 20 (depends on 13) The light emitting diode device of claim 13, wherein the second openings have a width greater than that of the second electrode extension.