# US 9,520,529 B2 · Composition for forming P-type diffusion layer, method of forming P-type diffusion layer, and method of producing photovoltaic cell

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- Number: US 9,520,529 B2
- Document ID: US9520529B2
- Status: Granted
- Kind: B2
- Application number: 14/076,212
- Filed: 2013-11-09
- Published: 2014-03-06
- Granted: 2016-12-13
- Earliest claimed: 2010-04-23
- Assignees: Hitachi Chemical Company, Ltd.
- Applicants: Hitachi Chemical Company, Ltd.
- Inventors: Yoichi Machii; Masato Yoshida; Takeshi Nojiri; Kaoru Okaniwa; Mitsunori Iwamuro; Shuichiro Adachi; Tetsuya Sato; Keiko Kizawa
- Web page: https://patentgrep.com/patent/US9520529B2

## CPC

- H10F 71/128: {Annealing}
- C03C 8/16: with vehicle or suspending agents, e.g. slip
- C03C 8/18: containing free metals
- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 77/12: Active materials
- H10F 77/211: {for photovoltaic cells}
- H10P 32/141: {the applied layer comprising oxides only}
- H10P 32/171: {being group IV material}
- H10P 32/19: {Diffusion sources}
- Y02E 10/547: Monocrystalline silicon PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- C03C: CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.

## Claims

### Claim 1

A method of forming a p-type diffusion layer, the method comprising:
providing a composition for forming a p-type diffusion layer, the composition comprising a glass powder and a dispersion medium, wherein the glass powder has a diameter of 10 μm or less and includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less;
applying the composition for forming a p-type diffusion layer to a semiconductor substrate; and
conducting a thermal diffusion treatment to diffuse the acceptor element into the semiconductor substrate.

### Claim 2 (depends on 1)

The method of claim 1, wherein the acceptor element is at least one selected from boron (B), aluminum (Al) or gallium (Ga).

### Claim 3 (depends on 1)

The method of claim 1, wherein the glass powder comprises:
at least one acceptor element-containing material selected from B2O3, Al2O3 or Ga2O3; and at least one glass component material selected from SiO2, K2O, Na2O, Li2O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, Tl2O, SnO, ZrO2 or MoO3.

### Claim 4 (depends on 1)

The method of claim 1, wherein the life time killer element is at least one selected from iron (Fe), copper (Cu), nickel (Ni), manganese (Mn), chromium (Cr), tungsten (W) or gold (Au).

### Claim 5

A method of producing a photovoltaic cell, the method comprising:
providing a composition for forming a p-type diffusion layer, the composition comprising a glass powder and a dispersion medium, wherein the glass powder has a diameter of 10 μm or less and includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less,
applying the composition for forming a p-type diffusion layer to a semiconductor substrate of the photovoltaic cell;
conducting a thermal diffusion treatment to form a p-type diffusion layer in the semiconductor substrate by diffusion of the acceptor element; and
forming an electrode on the p-type diffusion layer.

### Claim 6 (depends on 5)

The method of claim 5, wherein the acceptor element is at least one selected from boron (B), aluminum (Al) or gallium (Ga).

### Claim 7 (depends on 5)

The method of claim 5, wherein the glass powder comprises:
at least one acceptor element-containing material selected from B2O3, Al2O3 or Ga2O3; and at least one glass component material selected from SiO2, K2O, Na2O, Li2O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, Tl2O, SnO, ZrO2 or MoO3.

### Claim 8 (depends on 5)

The method of claim 5, wherein the life time killer element is at least one selected from iron (Fe), copper (Cu), nickel (Ni), manganese (Mn), chromium (Cr), tungsten (W) or gold (Au).