# US 9,520,527 B1 · Nitride semiconductor template and ultraviolet LED

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- Number: US 9,520,527 B1
- Document ID: US9520527B1
- Status: Granted
- Kind: B1
- Application number: 15/050,655
- Filed: 2016-02-23
- Published: 2016-12-29
- Granted: 2016-12-13
- Earliest claimed: 2015-06-29
- Assignees: Riken; Tamura Corporation
- Applicants: Tamura Corporation; Riken
- Inventors: Yoshikatsu Morishima; Hideki Hirayama
- Web page: https://patentgrep.com/patent/US9520527B1

## CPC

- H10H 20/825: containing nitrogen, e.g. GaN
- H10F 71/1274: {comprising nitrides, e.g. InGaN or InGaAlN}
- H10F 77/12485: {comprising nitride compounds, e.g. InGaN}
- H10H 20/815: having stress relaxation structures, e.g. buffer layers
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/2918: {being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913)}
- H10P 14/2926: {Crystal orientations}
- H10P 14/3216: {Nitrides}
- H10P 14/3251: {consisting of three or more layers}
- H10P 14/3416: {Nitrides}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A nitride semiconductor template includes a Ga2O3 substrate, a buffer layer that includes as a main component AlN and is formed on the Ga2O3 substrate, a first nitride semiconductor layer that includes as a main component AlxGa1-xN (0.2<x≦1) and is formed on the buffer layer, a second nitride semiconductor layer that includes as a main component AlyGa1-yN (0.2≦y≦0.55, y<x) and is formed on the first nitride semiconductor layer, and a third nitride semiconductor layer that is formed on the second nitride semiconductor layer and includes a multilayer structure including an Inu1Alv1Gaw1N (0.02≦u1≦0.03, u1+v1+w1=1) layer and Inu2Alv2Gaw2N (0.02≦u2≦0.03, u2+v2+w2=1, v1+0.05≦v2≦v1+0.2) layers on both sides of the Inu1Alv1Gaw1N layer.

## Claims

### Claim 1

A nitride semiconductor template, comprising:
a Ga2O3 substrate;
a buffer layer that comprises as a main component AlN and is formed on the Ga2O3 substrate;
a first nitride semiconductor layer that comprises as a main component AlxGa1-xN (0.2<x≦1) and is formed on the buffer layer;
a second nitride semiconductor layer that comprises as a main component AlyGa1-yN (0.2≦y≦0.55, y<x) and is formed on the first nitride semiconductor layer; and
a third nitride semiconductor layer that is formed on the second nitride semiconductor layer and comprises a multilayer structure including an Inu1Alv1Gaw1N (0.02≦u1≦0.03, u1+v1+w1=1) layer and Inu2Alv2Gaw2N (0.02≦u2≦0.03, u2+v2+w2=1, v1+0.05≦v2≦v1+0.2) layers on both sides of the Inu1Alv1Gaw1N layer.

### Claim 2 (depends on 1)

An ultraviolet LED, comprising the nitride semiconductor template according to claim 1.

### Claim 3 (depends on 1)

The nitride semiconductor template according to claim 1, wherein the second nitride semiconductor layer has a dislocation density of not more than 2.0×1010 cm−2.

### Claim 4 (depends on 3)

An ultraviolet LED, comprising the nitride semiconductor template according to claim 3.

### Claim 5 (depends on 1)

The nitride semiconductor template according to claim 1, wherein the second nitride semiconductor layer has no pit on a surface thereof.

### Claim 6 (depends on 5)

The nitride semiconductor template according to claim 5, wherein the second nitride semiconductor layer has a dislocation density of not more than 2.0×1010 cm−2.

### Claim 7 (depends on 5)

An ultraviolet LED, comprising the nitride semiconductor template according to claim 5.

### Claim 8 (depends on 1)

The nitride semiconductor template according to claim 1, wherein the second nitride semiconductor layer has no crack on a surface thereof.

### Claim 9 (depends on 8)

The nitride semiconductor template according to claim 8, wherein the second nitride semiconductor layer has no pit on a surface thereof.

### Claim 10 (depends on 8)

The nitride semiconductor template according to claim 8, wherein the second nitride semiconductor layer has a dislocation density of not more than 2.0×1010 cm−2.

### Claim 11 (depends on 8)

An ultraviolet LED, comprising the nitride semiconductor template according to claim 8.

### Claim 12 (depends on 1)

The nitride semiconductor template according to claim 1, wherein the buffer layer is not more than 10 nm in thickness.

### Claim 13 (depends on 12)

The nitride semiconductor template according to claim 12, wherein the second nitride semiconductor layer has no crack on a surface thereof.

### Claim 14 (depends on 12)

The nitride semiconductor template according to claim 12, wherein the second nitride semiconductor layer has no pit on a surface thereof.

### Claim 15 (depends on 12)

The nitride semiconductor template according to claim 12, wherein the second nitride semiconductor layer has a dislocation density of not more than 2.0×1010 cm−2.

### Claim 16 (depends on 12)

An ultraviolet LED, comprising the nitride semiconductor template according to claim 12.