# US 9,520,516 B2 · Photodetection semiconductor device having light receiving element

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- Number: US 9,520,516 B2
- Document ID: US9520516B2
- Status: Granted
- Kind: B2
- Application number: 15/040,734
- Filed: 2016-02-10
- Published: 2016-08-18
- Granted: 2016-12-13
- Earliest claimed: 2015-02-16
- Assignees: Sii Semiconductor Corporation
- Applicants: SII Semiconductor Corporation
- Inventors: Takeshi Koyama
- Web page: https://patentgrep.com/patent/US9520516B2

## CPC

- H10F 77/147: {Shapes of bodies}
- H10F 30/221: the potential barrier being a PN homojunction
- H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes}
- H10F 39/807: {Pixel isolation structures}
- H10F 77/148: {Shapes of potential barriers}
- H10F 77/206: {for devices having potential barriers}
- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- Y02E 10/50: Photovoltaic [PV] energy
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

In order to provide a photodetection semiconductor device including a light receiving element configured to reduce afterimages, a photodiode is formed by a PN junction into a circular shape so that a uniform distance from an end portion of a light receiving element to an electrode serving as a carrier outlet is realized, to thereby enable carriers to be uniformly taken out from all directions.

## Claims

### Claim 1

A photodetection semiconductor device including a light receiving element,
the light receiving element comprising:
a first conductivity type semiconductor substrate;
a circular second conductivity type well region formed into the first conductivity type semiconductor substrate from a surface of the first conductivity type semiconductor substrate;
a photodiode formed between the circular second conductivity type well region and the first conductivity type semiconductor substrate;
a second conductivity type semiconductor region concentrically formed inside the circular second conductivity type well region; and
an element isolation region for covering a region from around the circular second conductivity type well region to around the second conductivity type semiconductor region.

### Claim 2 (depends on 1)

A photodetection semiconductor device including a light receiving element according to claim 1, wherein the light receiving element further comprises a wiring layer for blocking light that is formed above the photodiode and has a circular opening.

### Claim 3 (depends on 2)

A photodetection semiconductor device including a light receiving element according to claim 2, wherein the wiring layer for blocking light comprises a plurality of wiring layers for blocking light.

### Claim 4

A photodetection semiconductor device including a light receiving element,
the light receiving element comprising:
a first conductivity type semiconductor substrate;
a photodiode formed by a rectangular second conductivity type semiconductor region coupled to the first conductivity type semiconductor substrate;
a wiring layer for blocking light formed above the rectangular second conductivity type semiconductor region of the photodiode, and having a circular opening; and
an N-type semiconductor region and an anode electrode both formed concentrically below a center of the circular opening of the wiring layer for blocking light.