# US 9,520,511 B2 · Apparatus and method for optically initiating collapse of a reverse biased P-type-N-type junction to cause a semiconductor switch to transition from a current blocking mode to a current conduction mode

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- Number: US 9,520,511 B2
- Document ID: US9520511B2
- Status: Granted
- Kind: B2
- Application number: 14/604,703
- Filed: 2015-01-24
- Published: 2015-07-30
- Granted: 2016-12-13
- Earliest claimed: 2012-08-04
- Assignees: Applied Physical Electronics, L.C.
- Applicants: Applied Physical Electronics, L.C.
- Inventors: William C. Nunnally
- Web page: https://patentgrep.com/patent/US9520511B2

## CPC

- H10F 77/1223: characterised by the dopants
- H10F 30/223: the potential barrier being a PIN barrier
- H10F 30/245: {Bipolar phototransistors}
- H10F 30/26: the devices having three or more potential barriers, e.g. photothyristors
- H10F 30/263: {Photothyristors}
- H10F 30/282: Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
- H10F 55/25: wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

An optical method of collapsing the electric field of an innovatively fabricated, reverse-biased PN junction causes a semiconductor switch to transition from a current blocking mode to a current conduction mode in a planar electron avalanche. This switch structure and the method of optically initiating the switch closure is applicable to conventional semiconductor switch configurations that employ a reverse-biased PN junction, including, but not limited to, thyristors, bipolar transistors, and insulated gate bipolar transistors.

## Claims

### Claim 1

A semiconductor switch, comprising:
a. a first layer comprising a P-type semiconductor material;
b. a second layer comprising a semiconductor material doped with a mid-band dopant, wherein the second layer is in contact with the first layer;
c. a third layer comprising an Intrinsic-type or slightly N-type semiconductor material, wherein the third layer is in contact with the second layer thereby forming a semiconductor junction interface between the second layer and the third layer; and
d. a fourth layer comprising an N-type semiconductor material, wherein the fourth layer is in contact with the third layer;
wherein the semiconductor switch is configurable in a reverse-bias circuit such that in a first switch state the semiconductor junction interface is reverse biased thereby blocking current flow through the circuit in the absence of optical energy from an optical energy source, and wherein optical energy applied to the switch from the optical energy source produces a second switch state in which a sufficient electrical charge is produced in the switch to cause an electric field present at a depletion region in the switch to exceed a breakdown level at the semiconductor junction interface, thereby enabling a flow of current through the switch.

### Claim 2 (depends on 1)

The semiconductor switch of claim 1, wherein an energy level of the optical energy applied to the switch from the optical energy source is less than a band-gap energy of a basic material forming the switch, and further wherein the energy level of the optical energy applied to the switch from the optical energy source is sufficient to ionize the mid-band dopant.

### Claim 3 (depends on 2)

The semiconductor switch of claim 2, wherein the basic material comprises silicon carbide.

### Claim 4 (depends on 3)

The semiconductor switch of claim 3, wherein the mid-band dopant comprises vanadium or zinc or a combination of vanadium and zinc.

### Claim 5 (depends on 2)

The semiconductor switch of claim 2, wherein the fourth layer and third layer are configured to allow at least some of the optical energy from the optical energy source to pass through, and the second layer is configured to absorb the optical energy passing through the fourth and third layer.

### Claim 6 (depends on 2)

The semiconductor switch of claim 2, further comprising a metal-Ohmic contact forming an electrical connection between the fourth layer and the reverse biasing circuit.

### Claim 7 (depends on 6)

The semiconductor switch of claim 6, wherein the metal-Ohmic contact comprises a contact opening, and wherein the metal-Ohmic contact is positioned to receive optical energy from the optical energy source through the contact opening.

### Claim 8

An optically-activated switching apparatus, comprising:
a. a semiconductor device, comprising:
i. a first layer comprising a P-type semiconductor material;
ii. a second layer comprising a material doped with a mid-band dopant, wherein the second layer is in contact with the first layer;
iii. a third layer comprising an Intrinsic-type or slightly N-type semiconductor material, wherein the third layer is in contact with the second layer thereby forming a semiconductor interface between the second layer and the third layer; and
iv. a fourth layer comprising an N-type semiconductor material, wherein the fourth layer is in contact with the third layer;
b. a reverse biasing circuit electrically connected to the semiconductor device to apply a reverse bias to the semiconductor device; and
c. an optical energy source configured to selectively direct optical energy onto the semiconductor device.

### Claim 9 (depends on 8)

The optically-activated switching apparatus of claim 8, wherein the semiconductor device comprises silicon carbide.

### Claim 10 (depends on 9)

The optically-activated switching apparatus of claim 9, wherein the mid-band dopant comprises vanadium.

### Claim 11 (depends on 10)

The optically-activated switching apparatus of claim 10, wherein the photon energy of the optical energy source is at least 2.1 eV.

### Claim 12 (depends on 11)

The optically-activated switching apparatus of claim 11, wherein the optical energy source is a green light source.

### Claim 13 (depends on 12)

The optically-activated switching apparatus of claim 12, wherein the optical energy source comprises a frequency-doubled YAG laser.

### Claim 14 (depends on 11)

The optically-activated switching apparatus of claim 11, wherein the optical energy source comprises a green laser diode.

### Claim 15 (depends on 8)

The optically-activated switching apparatus of claim 8, wherein the optical energy source is configured to apply the optical energy at the fourth layer.

### Claim 16

A method for optically activating a semiconductor switch, wherein the switch comprises a first layer comprising a P-type semiconductor material, a second layer comprising a semiconductor material doped with a mid-band dopant, a third layer comprising an Intrinsic-type or slightly N-type semiconductor material, and a fourth layer comprising an N-type semiconductor material, wherein the method comprises the steps of:
a. reverse biasing the switch by applying a source potential comprising a positive lead and a negative lead, wherein the positive lead is electrically connected to the fourth layer and the negative lead is electrically connected to the first layer;
b. directing an optical energy source toward the semiconductor switch; and
c. activating the optical energy source to apply sufficient optical energy to cause an electric field at a depletion layer adjacent an interface within the semiconductor switch to exceed a breakdown level, thereby enabling a flow of current.

### Claim 17 (depends on 16)

The method of claim 16, wherein the directing an optical energy source toward the semiconductor switch step comprises the step of directing the optical energy source toward the fourth layer of the semiconductor switch.

### Claim 18 (depends on 16)

The method of claim 16, wherein the activating the optical energy source step comprises the application of photon energy of at least 2.1 eV.

### Claim 19 (depends on 16)

The method of claim 16, wherein the activating the optical energy source step comprises the application of green optical energy to the semiconductor switch.