# US 9,520,487 B2 · Reverse conducting insulated gate bipolar transistor

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- Number: US 9,520,487 B2
- Document ID: US9520487B2
- Status: Granted
- Kind: B2
- Application number: 14/925,037
- Filed: 2015-10-28
- Published: 2016-06-16
- Granted: 2016-12-13
- Earliest claimed: 2014-12-12
- Assignees: Toyota Jidosha Kabushiki Kaisha
- Applicants: Toyota Jidosha Kabushiki Kaisha
- Inventors: Yasuhiro Hirabayashi; Hiroshi Hosokawa; Yoshifumi Yasuda; Akitaka Soeno; Masaru Senoo; Satoru Machida; Yusuke Yamashita
- Web page: https://patentgrep.com/patent/US9520487B2

## CPC

- H10D 12/481: {having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs}
- H10D 62/107: {Buried supplementary regions, e.g. buried guard rings (multi-RESURF H10D62/111)}
- H10D 62/142: {Anode regions of thyristors or collector regions of gated bipolar-mode devices}
- H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor layer of a reverse conducting insulated gate bipolar transistor is provided with a barrier region of the first conductive type, wherein the barrier region is disposed in the body region and electrically connects to the emitter electrode via a pillar member which extends from the one of main surfaces of the semiconductor layer. The barrier region includes a first barrier partial region, wherein a distance between the first barrier partial region and the drift region is a first distance, and a second barrier partial region, wherein a distance between the second barrier partial region and the drift region is a second distance which is longer than the first distance. The second barrier partial region is in contact with a side surface of an insulated trench gate.

## Claims

### Claim 1

A reverse conducting insulated gate bipolar transistor comprising:
a semiconductor layer;
an emitter electrode covering one of main surfaces of the semiconductor layer; and
an insulated trench gate extending from the one of main surfaces of the semiconductor layer into the semiconductor layer,
wherein the semiconductor layer comprises:
a drift region of a first conductive type, wherein the drift region is in contact with the insulated trench gate;
a body region of a second conductive type, wherein the body region is disposed above the drift region and is in contact with the insulated trench gate; and
a barrier region of the first conductive type, wherein the barrier region is disposed in the body region and electrically connects to the emitter electrode via a pillar member which extends from the one of main surfaces of the semiconductor layer,
the barrier region includes:
a first barrier partial region, wherein a distance between the first barrier partial region and the drift region is a first distance; and
a second barrier partial region, wherein a distance between the second barrier partial region and the drift region is a second distance which is longer than the first distance,
the first barrier partial region is not in contact with a side surface of the insulated trench gate,
the second barrier partial region is located between the insulated trench gate and the first barrier partial region, and is in contact with the side surface of the insulated trench gate, and
the first barrier partial region is closer to the drift region than the second barrier partial region.

### Claim 2 (depends on 1)

The reverse conducting insulated gate bipolar transistor according to claim 1, wherein
the semiconductor layer further comprises a high concentration region of the second conductive type, wherein the high concentration region is disposed in the body region and is located under the second barrier partial region, and
an impurity concentration of the high concentration region is higher than an impurity concentration of the body region.