# US 9,520,480 B1 · Normally off gallium nitride field effect transistors (FET)

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 9,520,480 B1
- Document ID: US9520480B1
- Status: Granted
- Kind: B1
- Application number: 14/729,396
- Filed: 2015-06-03
- Published: 2016-12-29
- Granted: 2016-12-13
- Earliest claimed: 2009-10-30
- Assignees: Alpha and Omega Semiconductor Incorporated
- Applicants: Alpha and Omega Semiconductor Incorporated
- Inventors: Anup Bhalla; Tinggang Zhu
- Web page: https://patentgrep.com/patent/US9520480B1

## CPC

- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
- H10D 30/47: having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D 30/4732: {using Group III-V semiconductor material}
- H10D 30/4738: {having multiple donor layers}
- H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs}
- H10D 30/68: Floating-gate IGFETs
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 64/111: {Field plates}
- H10D 64/118: {Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 62/221: {of FETs}
- H10D 64/251: {Source or drain electrodes for field-effect devices}
- H10D 64/512: {Disposition of the gate electrodes, e.g. buried gates}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A heterostructure field effect transistor (HFET) gallium nitride (GaN) semiconductor power device comprises a hetero junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer. The power device further comprises a source electrode and a drain electrode disposed on two opposite sides of a gate electrode disposed on top of the hetero junction structure for controlling a current flow between the source and drain electrodes in the 2DEG layer. The power device further includes a floating gate located between the gate electrode and hetero junction structure, wherein the gate electrode is insulated from the floating gate with an insulation layer and wherein the floating gate is disposed above and padded with a thin insulation layer from the hetero junction structure and wherein the floating gate is charged for continuously applying a voltage to the 2DEG layer to pinch off the current flowing in the 2DEG layer between the source and drain electrodes whereby the HFET semiconductor power device is a normally off device.

## Claims

### Claim 1

A method of forming a heterostructure field effect transistor (HFET) gallium nitride (GaN) semiconductor power device comprising:
forming a hetero junction structure from a plurality of first semiconductor layers interfacing a plurality of second semiconductor layers having different band gaps to make a plurality of two dimensional gas (2DEG) at the hetero-junctions;
forming a source electrode and drain electrode on opposite ends of the 2DEG;
forming a floating gate covering over and wrapping around a portion of the 2DEG, between the source and drain electrodes;
forming a gate electrode covering over and wrapping around said floating gate and applying an insulation layer to insulate the gate electrode from the floating gate by an insulating layer; and
charging the floating gate to deplete the 2DEG for operating the HFET semiconductor device in a normally off condition and turning on the semiconductor power device by applying a voltage to the gate electrode for canceling the charge of the floating gate.

### Claim 2 (depends on 1)

The method of claim 1 wherein:
the step of forming the hetero junction structure further comprises a step of forming the plurality of the first semiconductor layer comprising GaN interfacing the plurality of the second semiconductor layer comprising Aluminum gallium nitride (AlGaN).

### Claim 3 (depends on 1)

The method of claim 1 wherein:
the step of charging the floating gate to deplete the 2DEG further comprises a step of forming the floating gate with a built-in negative charge.

### Claim 4 (depends on 1)

The method of claim 1 wherein:
the step of charging the floating gate to deplete the 2DEG further comprises a step of writing negative charges into said floating gate by applying a similar process of writing charges to a floating gate of a flash memory.

### Claim 5 (depends on 1)

The method of claim 1 further comprising:
forming the HFET gallium nitride (GaN) semiconductor power device on a sapphire substrate for supporting the hetero junction structure thereon.

### Claim 6 (depends on 1)

The method of claim 1 wherein:
the process of forming the floating gate further comprises a step of forming the floating gate with the negatively charged potential to shift the pinch off voltage of the 2DEG layer from a negative pinch off voltage to a positive pinch off voltage equal to or greater than three volts (3.0V).

### Claim 7 (depends on 1)

The method of claim 1 wherein:
the step of forming the source electrode further includes a step of forming the source electrode with an extended field plate extending from the source electrode and connecting to the gate electrode wrapping around the floating gate.

### Claim 8 (depends on 1)

The method of claim 1 wherein:
the step of forming the source electrode further includes a step of forming an extended field plate extending from the source electrode and connecting to the gate electrode wrapping around the floating gate wherein the field plate is insulated from the floating gate with an insulation layer.