# US 9,520,465 B2 · Diode, semiconductor device, and MOSFET

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- Number: US 9,520,465 B2
- Document ID: US9520465B2
- Status: Granted
- Kind: B2
- Application number: 14/113,276
- Filed: 2012-07-27
- Published: 2014-02-20
- Granted: 2016-12-13
- Earliest claimed: 2011-07-27
- Assignees: Kabushiki Kaisha Toyota Chuo Kenkyusho; Toyota Jidosha Kabushiki Kaisha
- Applicants: Yusuke Yamashita; Satoru Machida; Takahide Sugiyama; Jun Saito
- Inventors: Yusuke Yamashita; Satoru Machida; Takahide Sugiyama; Jun Saito
- Web page: https://patentgrep.com/patent/US9520465B2

## CPC

- H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors}
- H10D 8/411: {PN diodes having planar bodies}
- H10D 8/60: Schottky-barrier diodes
- H10D 12/411: {Insulated-gate bipolar transistors [IGBT]}
- H10D 12/481: {having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs}
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 62/107: {Buried supplementary regions, e.g. buried guard rings (multi-RESURF H10D62/111)}
- H10D 62/113: {Isolations within a component, i.e. internal isolations}
- H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}
- H10D 62/13: Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
- H10D 62/157: {Impurity concentrations or distributions}
- H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)}
- H10D 62/60: Impurity distributions or concentrations
- H10D 62/8325: {Silicon carbide}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates}
- H10D 64/647: {Schottky drain or source electrodes for IGFETs}
- H10D 84/146: {the built-in components being Schottky barrier diodes}
- H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors}
- H10D 62/126: {Top-view geometrical layouts of the regions or the junctions}
- H10D 62/142: {Anode regions of thyristors or collector regions of gated bipolar-mode devices}
- H10D 62/85: being Group III-V materials, e.g. GaAs
- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode electrode, a cathode region made of a first conductivity type semiconductor, a drift region made of a low concentration first conductivity type semiconductor, an anode region made of a second conductivity type semiconductor, an anode electrode made of metal, a barrier region formed between the drift region and the anode region and made of a first conductivity type semiconductor having a concentration higher than that of the drift region, and a pillar region formed so as to connect the barrier region to the anode electrode and made of a first conductivity type semiconductor having a concentration higher than that of the barrier region. The pillar region and the anode are connected through a Schottky junction.

## Claims

### Claim 1

A diode comprising:
a cathode electrode;
a cathode region made of first conductivity type semiconductor;
a drift region made of first conductivity type semiconductor having a concentration lower than that of the cathode region;
an anode region made of second conductivity type semiconductor;
an anode electrode made of metal;
a barrier region formed between the drift region and the anode region and made of first conductivity type semiconductor having a concentration higher than that of the drift region; and
a pillar region made of first conductivity type semiconductor having a concentration higher than that of the barrier region, the pillar region being formed so as to penetrate through the anode region from an anode electrode side, reach the barrier region, and directly connected the barrier region to the anode electrode,
wherein the pillar region and the anode electrode are connected through a Schottky junction.

### Claim 2 (depends on 1)

The diode according to claim 1, further comprising an electric field progress preventing region formed between the barrier region and the drift region and made of second conductivity type semiconductor.

### Claim 3 (depends on 1)

The diode according to claim 1, wherein a trench extending from the anode region to the drift region is formed, and
a trench electrode which is coated with an insulating film is formed inside the trench.

### Claim 4 (depends on 1)

The diode according to claim 1, further comprising a cathode short-circuit region partially formed in the cathode region and made of second conductivity type semiconductor.

### Claim 5 (depends on 1)

A semiconductor device comprising the diode according to claim 1 and an IGBT that are integrally formed, the IGBT including:
a collector electrode;
a collector region made of second conductivity type semiconductor;
a second drift region continuously formed from the drift region and made of first conductivity type semiconductor having a concentration lower than that of the cathode region;
a body region made of second conductivity type semiconductor;
an emitter region made of first conductivity type semiconductor;
an emitter electrode made of metal;
a gate electrode opposite to the body region between the emitter region and the second drift region via an insulating film;
a second barrier region formed between the second drift region and the body region and made of first conductivity type semiconductor having a concentration higher than that of the second drift region; and
a second pillar region formed so as to connect the second barrier region to the emitter electrode and made of first conductivity type semiconductor having a concentration higher than that of the second barrier region,
wherein the second pillar region and the emitter electrode are connected through a Schottky junction.

### Claim 6 (depends on 5)

The semiconductor device according to claim 5, further comprising a second electric field progress preventing region formed between the second barrier region and the second drift region and made of second conductivity type semiconductor.