# US 9,520,459 B2 · Surface treatment method for semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,520,459 B2 - Document ID: US9520459B2 - Status: Granted - Kind: B2 - Application number: 15/048,620 - Filed: 2016-02-19 - Published: 2016-06-16 - Granted: 2016-12-13 - Earliest claimed: 2012-12-21 - Assignees: SK hynix Inc. - Applicants: SK hynix Inc. - Inventors: Sung-Hyuk Cho; Hyo-Sang Kang; Sung-Ki Park; Kwon Hong; Hyung-Soon Park; Hyung-Hwan Kim; Young-Bang Lee; Ji-Hye Han; Tae-Yeon Jung; Hyeong-Jin Nor - Web page: https://patentgrep.com/patent/US9520459B2 ## CPC - H10D 1/692: {Electrodes} - H10B 12/03: {Making the capacitor or connections thereto} - H10D 1/716: {having vertical extensions} - H10P 50/283: {by chemical means} - H10P 70/23: {during, before or after processing of insulating materials} - H10P 70/27: {during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers} - H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass - H10B 12/033: {the capacitor extending over the transistor} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10B: ELECTRONIC MEMORY DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A surface treatment method for a semiconductor device includes providing a substrate where a plurality of projected patterns are formed, forming a hydrophobic coating layer on a surface of each of the plurality of projected patterns, rinsing the substrate with deionized water, and drying the substrate, wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate having more than one hydrocarbon group, phosphonate having more than one hydrocarbon group, or a mixture thereof. ## Claims ### Claim 1 A surface treatment method for a semiconductor device having capacitor patterns, comprising: providing a substrate, where projected capacitor patterns including a metal-containing material are formed, in a mold insulation layer; removing the mold insulation layer by using a wet etch solution; rinsing the substrate, from which the mold insulation layer is removed, with deionized water; treating the substrate, where the projected capacitor patterns are formed, with an SC-1 (NHOH+HO+OH) solution; rinsing the treated substrate with deionized water; forming a hydrophobic coating layer on a surface of each of the projected capacitor patterns; rinsing the substrate, where the hydrophobic coating layer is formed, with deionized water; and drying the substrate, wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate, wherein the phosphonate has more than one hydrocarbon group, wherein each of the projected capacitor patterns is thinned during the treating the substrate with the SC-1 solution. ### Claim 2 (depends on 1) The surface treatment method of claim 1, further comprising: rinsing the substrate with alcohol before the forming of the hydrophobic coating layer on the surface of each of the projected capacitor patterns; rinsing the substrate with alcohol after the forming of the hydrophobic coating layer on the surface of each of the projected capacitor patterns; or rinsing the substrate with alcohol before and after the forming of the hydrophobic coating layer on the surface of each of the plurality of projected capacitor patterns. ### Claim 3 (depends on 1) The surface treatment method of claim 1, wherein the hydrocarbon group is a C1 to C30 hydrocarbon group. ### Claim 4 (depends on 1) The surface treatment method of claim 1, wherein the coating agent further includes a solvent. ### Claim 5 (depends on 1) The surface treatment method of claim 1, wherein the coating agent further includes alcohol. ### Claim 6 (depends on 1) The surface treatment method of claim 1, further comprising: removing the hydrophobic coating layer after the drying of the substrate. ### Claim 7 (depends on 6) The surface treatment method of claim 6, wherein the hydrophobic coating layer is removed through at least one method selected from the group consisting of a rapid thermal annealing (RTA) process, a plasma treatment, an ultraviolet (UV) ray treatment, and an ashing process. ### Claim 8 (depends on 1) The surface treatment method of claim 1, wherein the metal-containing material include a titanium nitride (TiN) capacitor pattern. ### Claim 9 (depends on 1) The surface treatment method of claim 1, wherein each of the projected capacitor patterns has a High Aspect Ratio (HAR) of approximately 40 or higher. ### Claim 10 (depends on 1) The surface treatment method of claim 1, wherein each of the projected capacitor patterns is thinned by a thickness of 5 Å to 15 Å during the treating the substrate with the SC-1 (NHOH+HO+OH) solution. ### Claim 11 (depends on 1) The surface treatment method of claim 1, wherein each of the projected capacitor patterns have a High Aspect Ratio (HAR) of approximately 40 or higher. ### Claim 12 A surface treatment method for a semiconductor device, comprising: forming projected patterns, each of which includes a metal-containing material, in a mold insulation layer over a substrate; removing the mold insulation layer by using a wet etch solution after the projected patterns are formed; rinsing the substrate from which the mold insulation layer is removed with deionized water after the mold insulation layer is removed; treating the substrate with an SC-1 (NHOH+HO+OH) solution after the substrate is rinsed with the deionized water; rinsing the treated substrate with deionized water after the substrate is treated with the SC-1 (NHOH+HO+OH) solution; forming a hydrophobic coating layer on a surface of each of the projected patterns; rinsing the substrate where the hydrophobic coating layer is formed with deionized water after the hydrophobic coating layer is formed, wherein a remaining unreacted hydrophobic coating layer is removed; and drying the substrate where the hydrophobic coating layer is formed, wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate, phosphonate having more than one hydrocarbon group, wherein the surface of each of the projected patterns is etched during the treating the substrate with the SC-1 solution. ### Claim 13 (depends on 12) The surface treatment method of claim 12, further comprising: rinsing the substrate with alcohol before the forming of the hydrophobic coating layer on the surface of each of the projected capacitor patterns; rinsing the substrate with alcohol after the forming of the hydrophobic coating layer on the surface of each of the plurality of projected capacitor patterns; or rinsing the substrate with alcohol before and after the forming of the hydrophobic coating layer on the surface of each of the projected capacitor patterns. ### Claim 14 (depends on 12) The surface treatment method of claim 12, wherein the hydrocarbon group is a C1 to C30 hydrocarbon group. ### Claim 15 (depends on 12) The surface treatment method of claim 12, wherein the coating agent further includes a solvent. ### Claim 16 (depends on 12) The surface treatment method of claim 12, wherein the coating agent further includes alcohol. ### Claim 17 (depends on 16) The surface treatment method of claim 16, wherein the hydrophobic coating layer is removed through at least one method selected from the group consisting of a rapid thermal annealing (RTA) process, a plasma treatment, an ultraviolet (UV) ray treatment, and an ashing process. ### Claim 18 (depends on 12) The surface treatment method of claim 12, further comprising: removing the hydrophobic coating layer after the drying of the substrate. ### Claim 19 (depends on 12) The surface treatment method of claim 12, wherein the surface of each of the projected patterns is etched by a thickness of 5 to 15 during the treating the substrate with the SC-1 (NHOH+HO+OH) solution. ### Claim 20 (depends on 12) The surface treatment method of claim 12, wherein the metal-containing material includes a titanium nitride (TiN) capacitor pattern.