# US 9,520,455 B2 · Organic light emitting display and method of fabricating the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,520,455 B2 - Document ID: US9520455B2 - Status: Granted - Kind: B2 - Application number: 14/792,117 - Filed: 2015-07-06 - Published: 2016-01-07 - Granted: 2016-12-13 - Earliest claimed: 2014-07-04 - Assignees: LG Display Co., Ltd. - Applicants: LG Display Co., Ltd. - Inventors: Kum-Mi Oh; Kyung-Mo Son; Sung-Hoon Kim - Web page: https://patentgrep.com/patent/US9520455B2 ## CPC - H10K 59/1213: {the pixel elements being TFTs} - H10K 10/486: {the channel region comprising two or more active layers, e.g. forming pn heterojunctions} - H10K 59/1201: {Manufacture or treatment} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A subpixel structure for a display device and a method of fabricating the display device are discussed. The subpixel structure can include a light emitting diode, a first switching transistor having a first gate electrode and a first active layer, a driving transistor having a second gate electrode and a second active layer, a second switching transistor including a third gate electrode and a third active layer, and at least one of the first, second and third gate electrodes is disposed between the corresponding first, second and third active layers and a substrate. ## Claims ### Claim 1 A subpixel structure for a display device, the subpixel structure comprising: a light emitting diode formed on a substrate; a first switching transistor including a first gate electrode connected to a first scan line, a first source electrode connected to a data line, a first drain electrode, and a first active layer forming a first channel part between the first source electrode and the first drain electrode; a driving transistor including a second gate electrode, a second source electrode, a second drain electrode, and a second active layer forming a second channel part between the second source electrode and the second drain electrode, wherein the driving transistor is connected to the first switching transistor and the light emitting diode; a second switching transistor including a third gate electrode connected to a second scan line, a third source electrode, the second a third drain electrode, and a third active layer forming a third channel part between the third source electrode and the second drain electrode; and a storage capacitor connected to the first switching transistor and the driving transistor, wherein at least one of the first, second and third gate electrodes is disposed between the corresponding first, second and third active layers and the substrate, wherein the second gate electrode forms at least a portion of a top electrode of the storage capacitor, and wherein the second gate electrode is disposed between the second active layer and the substrate. ### Claim 2 (depends on 1) The subpixel structure according to claim 1, wherein the storage capacitor includes a storage electrode in contact with the substrate and disposed under the light emitting diode and overlapping the second gate electrode. ### Claim 3 (depends on 2) The subpixel structure according to claim 2, wherein the substrate is a flexible substrate formed of a flexible material. ### Claim 4 (depends on 2) The subpixel structure according to claim 2, wherein the storage electrode overlapping the second gate electrode of the driving transistor includes an insulating film disposed between the storage electrode and the second gate electrode to form the storage capacitor. ### Claim 5 (depends on 1) The subpixel structure according to claim 1, wherein each of the first and second scan lines comprises a dual layer structure including first and second line parts connected to each other and an insulating film disposed therebetween. ### Claim 6 (depends on 1) The subpixel structure according to claim 1, wherein the first, second and third active layers are formed on a gate insulating film and the gate insulating film is formed on the first, second and third gate electrodes. ### Claim 7 (depends on 1) The subpixel structure according to claim 1, wherein a storage electrode is disposed under the light emitting diode and overlaps with the second gate electrode of the driving transistor with a storage insulating film disposed therebetween to form the storage capacitor, and wherein each of the first and second scan lines comprises a dual layer structure including first and second line parts connected to each other and the storage insulating film disposed therebetween. ### Claim 8 (depends on 1) The subpixel structure according to claim 1, wherein at least one of the first, second and third active layers is made of polycrystalline silicon. ### Claim 9 (depends on 1) The subpixel structure according to claim 1, further comprising an anode electrode connected to a storage electrode through a drain contact hole. ### Claim 10 (depends on 1) A display device comprising: a display panel including a plurality of pixels, at least one pixel of the plurality of pixels including the subpixel structure according to claim 1. ### Claim 11 (depends on 10) The display device according to claim 10, wherein the storage capacitor includes a storage electrode in contact with the substrate and disposed under the light emitting diode and overlapping the second gate electrode. ### Claim 12 (depends on 11) The display device according to claim 11, wherein the storage electrode overlapping the second gate electrode of the driving transistor includes an insulating film disposed between the storage electrode and the second gate electrode to form the storage capacitor. ### Claim 13 (depends on 10) The display device according to claim 10, wherein each of the first and second scan lines comprises a dual layer structure including first and second line parts connected to each other and an insulating film disposed therebetween. ### Claim 14 (depends on 10) The display device according to claim 10, wherein the substrate is a flexible substrate formed of a flexible material, and wherein the first, second and third active layers are formed on a gate insulating film and the gate insulating film is formed on the first, second and third gate electrodes. ### Claim 15 (depends on 10) The display device according to claim 10, wherein a storage electrode overlaps with the second gate electrode of the driving transistor with a storage insulating film disposed therebetween to form the storage capacitor, and wherein each of the first and second scan lines comprises a dual layer structure including first and second line parts connected to each other and the storage insulating film disposed therebetween. ### Claim 16 (depends on 1) A display panel comprising a plurality of pixels, at least one pixel of the plurality of pixels including the subpixel structure according to claim 1, wherein the at least one pixel of the plurality of pixels includes a plurality of subpixels, each subpixel having a scan contact hole formed in a corresponding subpixel area comprising a connection electrode connected to the first scan line. ### Claim 17 (depends on 1) A display panel comprising a plurality of pixels, at least one pixel of the plurality of pixels including the subpixel structure according to claim 1, wherein the at least one pixel of the plurality of pixels includes a plurality of adjacent subpixels, and every other adjacent subpixel includes a scan contact hole formed in a corresponding subpixel area comprising a connection electrode connected to the first scan line.