# US 9,520,442 B2 · Optoelectronic component > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,520,442 B2 - Document ID: US9520442B2 - Status: Granted - Kind: B2 - Application number: 14/575,913 - Filed: 2014-12-18 - Published: 2015-04-16 - Granted: 2016-12-13 - Earliest claimed: 2010-07-26 - Assignees: OSRAM Opto Semiconductors GmbH - Applicants: OSRAM Opto Semiconductors GmbH - Inventors: Ralph Wirth; Alexander Linkov - Web page: https://patentgrep.com/patent/US9520442B2 ## CPC - H10W 90/00: Package configurations - H10H 20/8506: {Containers} - H10H 20/851: Wavelength conversion means - H10H 20/853: characterised by their shape - H10H 20/854: characterised by their material, e.g. epoxy or silicone resins - H10H 20/855: Optical field-shaping means, e.g. lenses - H10H 20/856: Reflecting means - H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) - H10H 20/824: comprising only Group III-V materials, e.g. GaP - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/8512: {Wavelength conversion materials} - H10H 20/882: {Scattering means (H10H20/82 takes precedence)} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract An optoelectronic component can be used for mixing electromagnetic radiation having different wavelengths, in particular in the far field. The optoelectronic component includes a carrier. A first semiconductor chip has a first radiation exit surface for emitting electromagnetic radiation in a first spectral range is provided on the carrier and a second semiconductor chip as a second radiation exit surface for emitting electromagnetic radiation in a second spectral range is provided on the carrier. A diffusing layer is provided on the radiation exit surfaces of the semiconductor chips which face away from the carrier. ## Claims ### Claim 1 An optoelectronic component for mixing electromagnetic radiation having different wavelengths in a far field, the component comprising: a carrier; a first semiconductor chip arranged on the carrier and having a first radiation exit surface for emitting electromagnetic radiation in a first spectral range; a second semiconductor chip arranged on the carrier and having a second radiation exit surface for emitting electromagnetic radiation in a second spectral range; a diffusing layer overlying the radiation exit surfaces of the first and second semiconductor chips; a conversion layer between the radiation exit surfaces of the semiconductor chips and the diffusing layer; and a clear material arranged in the conversion layer above the first semiconductor chip, wherein the clear material extends from the first semiconductor chip to the diffusion layer, wherein the clear material directly adjoins the first radiation exit surface, the conversion layer and the diffusion layer, and wherein the clear material does not cover the second radiation exist surface. ### Claim 2 (depends on 1) The optoelectronic component according to claim 1, wherein the first semiconductor chip comprises an AlGaInP semiconductor chip that emits electromagnetic radiation in a red and/or yellow spectral range. ### Claim 3 (depends on 1) The optoelectronic component according to claim 1, wherein the second semiconductor chip comprises an InGaN semiconductor chip that emits electromagnetic radiation in a blue and/or green spectral range. ### Claim 4 (depends on 1) The optoelectronic component according to claim 1, wherein the first and the second semiconductor chips are potted in a single potting. ### Claim 5 (depends on 4) The optoelectronic component according to claim 4, wherein the single potting is a planar volume potting. ### Claim 6 (depends on 1) The optoelectronic component according to claim 1, wherein a phosphorescent material is provided in the conversion layer, the phosphorescent material being present in a concentration of 5 to 25 percent by weight. ### Claim 7 (depends on 1) The optoelectronic component according to claim 1, wherein scattering particles are provided in the diffusing layer. ### Claim 8 (depends on 7) The optoelectronic component according to claim 7, wherein the scattering particles are present in a concentration of 0.05 to 50 percent by weight. ### Claim 9 (depends on 1) The optoelectronic component according to claim 1, wherein the clear material is in the form of a lens on chip. ### Claim 10 (depends on 1) The optoelectronic component according to claim 1, further comprising a free light mixing layer on that side of the diffusing layer that faces the carrier, the light mixing layer being free of diffusing material and conversion means and covering the first semiconductor chip and the second semiconductor chip. ### Claim 11 (depends on 1) The optoelectronic component according to claim 1, wherein the first and second semiconductor chips are cast up to a level of their active layers in silicone filled with titanium dioxide, having a reflectivity of greater than 95%. ### Claim 12 (depends on 1) The optoelectronic component according to claim 1, wherein the diffusing layer has the form of a lens. ### Claim 13 (depends on 1) The optoelectronic component according to claim 1, wherein lateral, reflective walls are seated on the carrier. ### Claim 14 (depends on 1) A lighting device comprising an optoelectronic component according to claim 1, wherein the optoelectronic component is coupled to a reflector. ### Claim 15 (depends on 14) The lighting device according to claim 14, wherein the reflector has the form of a parabola at least in regions.