# US 9,520,438 B2 · Electromagnetic wave detecting element

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- Number: US 9,520,438 B2
- Document ID: US9520438B2
- Status: Granted
- Kind: B2
- Application number: 15/138,476
- Filed: 2016-04-26
- Published: 2016-08-18
- Granted: 2016-12-13
- Earliest claimed: 2008-04-02
- Assignees: FUJIFILM Corporation
- Applicants: Fujifilm Corporation
- Inventors: Yoshihiro Okada
- Web page: https://patentgrep.com/patent/US9520438B2

## CPC

- H10F 39/1898: {Indirect radiation image sensors, e.g. using luminescent members}
- G01T 1/202: the detector being a crystal
- H10F 39/016: {of thin-film-based image sensors}
- H10F 39/024: {of coatings or optical elements}
- H10F 39/80377: {characterised by the channel of the transistor, e.g. channel having a doping gradient}
- H10F 39/805: {Coatings}
- H10F 39/8057: {Optical shielding}
- H10F 39/807: {Pixel isolation structures}
- H10F 39/811: {Interconnections}
- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00)

## Abstract

The present invention provides an electromagnetic wave detecting element that can suppress occurrence of cracking at a substrate peripheral portion, and occurrence of breakage of lead-out wires. An interlayer insulating film is formed so as to cover TFT switches on a substrate. An interlayer insulating film is formed so as to cover semiconductor layer of sensor portions that generate charges due to electromagnetic waves that are an object of detection being irradiated, and cover a region on the substrate where the interlayer insulating film is formed.

## Claims

### Claim 1

An electromagnetic wave detecting element, comprising:
a substrate including a plurality of scan lines and a plurality of signal lines disposed to intersect one another, and TFT switching elements provided at respective intersection portions of the scan lines and the signal lines;
a first interlayer insulating film that covers the TFT switching elements;
sensor portions provided on the first interlayer insulating film to correspond respectively to the intersection portions, and connected respectively to the TFT switching elements, and generating charge as a result of electromagnetic waves being irradiated; and
a second interlayer insulating film that covers the sensor portions on the first interlayer insulating film, a region on the substrate at which the first interlayer insulating film is formed, and longitudinal end faces of the first interlayer insulating film.

### Claim 2 (depends on 1)

The electromagnetic wave detecting element of claim 1, wherein at least one of the first interlayer insulating film or the second interlayer insulating film is formed of an organic material.

### Claim 3 (depends on 1)

The electromagnetic wave detecting element of claim 1, wherein thickness of the first interlayer insulating film and the second interlayer insulating film are 1 μm to 4 μm.

### Claim 4 (depends on 1)

The electromagnetic wave detecting element of claim 1, wherein the first interlayer insulating film and the second interlayer insulating film are formed by coating.

### Claim 5 (depends on 1)

The electromagnetic wave detecting element of claim 1, wherein:
the sensor portions generate charge as a result of light being illuminated; and
the electromagnetic wave detecting element further comprises a wavelength converting layer provided on the second interlayer insulating film such that end portions of the wavelength converting layer are at an inner side of the second interlayer insulating film, the wavelength converting layer converting radiation into light.

### Claim 6 (depends on 1)

The electromagnetic wave detecting element of claim 1, further comprising a protective insulating film formed of an inorganic material and provided between the first interlayer insulating film and the second interlayer insulating film.

### Claim 7 (depends on 6)

The electromagnetic wave detecting element of claim 6, wherein the protective insulating film is formed by CVD.

### Claim 8 (depends on 1)

The electromagnetic wave detecting element of claim 1, wherein:
each of the sensor portions includes a lower electrode formed on the first interlayer insulating film, a semiconductor layer formed on the lower electrode, and a upper electrode formed on the semiconductor layer; and
the lower electrodes are formed on the first interlayer insulating film so as to respectively cover the TFT switching elements.

### Claim 9 (depends on 8)

The electromagnetic wave detecting element of claim 8, wherein:
the lower electrodes are formed of an electrically-conductive metal in a case in which a thickness of the semiconductor layer is around 1 μm; and
the lower electrodes are formed of a light-shielding metal in a case in which the thickness of the semiconductor layer is around 0.2 μm to 0.5 μm.