# US 9,520,432 B2 · Solid-state imaging devices with impurity regions between photoelectric conversion regions and methods for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,520,432 B2 - Document ID: US9520432B2 - Status: Granted - Kind: B2 - Application number: 14/837,673 - Filed: 2015-08-27 - Published: 2015-12-24 - Granted: 2016-12-13 - Earliest claimed: 2002-11-14 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Kiyoshi Hirata - Web page: https://patentgrep.com/patent/US9520432B2 ## CPC - H10F 39/80377: {characterised by the channel of the transistor, e.g. channel having a doping gradient} - H10F 39/014: {of CMOS image sensors} - H10F 39/151: {Geometry or disposition of pixel elements, address lines or gate electrodes} - H10F 39/153: {Two-dimensional or three-dimensional array CCD image sensors} - H10F 39/158: {having arrangements for blooming suppression} - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/1865: {Overflow drain structures} - H10F 39/80: {Constructional details of image sensors} - H10F 39/8033: {Photosensitive area} - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/807: {Pixel isolation structures} - H10F 77/14: Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate. ## Claims ### Claim 1 An imaging device comprising: a semiconductor substrate having a first side and a second side opposite to the first side; a first photoelectric conversion region and a second photoelectric conversion region disposed in the semiconductor substrate; a transfer electrode adjacent to the first side of the semiconductor substrate; and a first impurity region and a second impurity region in the semiconductor substrate; wherein, the first and second impurity regions are between the first photoelectric conversion region and the second photoelectric conversion region, the first and second photoelectric conversion regions include an N-type impurity region, the first and second impurity regions include a P-type impurity region, the second impurity region is closer to the second side of the semiconductor substrate than the first impurity region, and a cross-sectional area of the first impurity region is larger than a cross-sectional area of the second impurity region. ### Claim 2 (depends on 1) The imaging device according to claim 1, further comprising a third impurity region associated with the second impurity region along a direction of increasing depth of the semiconductor substrate, wherein when viewed in the direction of increasing depth of the semiconductor substrate, a cross-sectional area of the third impurity region is smaller than a cross-sectional area of the second impurity region. ### Claim 3 (depends on 1) The imaging device according to claim 1, wherein each of the impurity regions, when viewed in a direction of increasing depth of the semiconductor substrate, has a generally uniform cross-sectional area that is different for at least two of the impurity regions. ### Claim 4 (depends on 2) The imaging device according to claim 2, wherein each of the impurity regions, when viewed in a direction of increasing depth of the semiconductor substrate, has a generally uniform cross-sectional area that is different for at least two of the impurity regions. ### Claim 5 (depends on 3) The imaging device according to claim 3, wherein, for each of the impurity regions in the direction of increasing depth of the semiconductor substrate, the generally uniform cross-sectional area is less than that of a preceding adjoining impurity region. ### Claim 6 (depends on 2) The imaging device according to claim 2, wherein each of the impurity regions, when viewed in the direction of increasing depth of the semiconductor substrate, has a generally uniform cross-sectional area and wherein, for each of the impurity regions in the direction of increasing depth of the semiconductor substrate, the generally uniform cross-sectional area is less than that of a preceding adjoining impurity region. ### Claim 7 (depends on 1) The imaging device according to claim 1, wherein each of the impurity regions, when viewed in a direction of increasing depth of the semiconductor substrate, has a generally uniform cross-sectional area equal to the generally uniform cross-sectional area of each other impurity region of the plurality of adjoining impurity regions. ### Claim 8 (depends on 1) The imaging device according to claim 1, further comprising a third impurity region associated with the second impurity region along a direction of increasing depth of the semiconductor substrate, wherein each of the impurity regions, when viewed in the direction of increasing depth of the semiconductor substrate, has a generally uniform cross-sectional area equal to the generally uniform cross-sectional area of each other impurity region of the plurality of adjoining impurity regions. ### Claim 9 (depends on 1) The imaging device according to claim 1, wherein each of the impurity regions has an ion concentration different from the ion concentration of at least one other impurity region. ### Claim 10 (depends on 2) The imaging device according to claim 2, wherein each of the impurity regions has an ion concentration different from the ion concentration of at least one other impurity region. ### Claim 11 (depends on 1) The imaging device according to claim 1, wherein the imaging device is a CCD imaging device. ### Claim 12 (depends on 1) The imaging device according to claim 1, wherein the imaging device is a CMOS imaging device. ### Claim 13 An imaging device comprising: a semiconductor substrate having a first side and a second side opposite to the first side; a first photoelectric conversion region and a second photoelectric conversion region disposed in the semiconductor substrate; a transfer electrode disposed adjacent to the first side of the semiconductor substrate; a first impurity region and a second impurity region disposed in the semiconductor substrate; and an overflow barrier disposed in the semiconductor substrate; wherein, the first and second impurity regions are in contact with the overflow barrier, the first and second impurity regions are disposed between the first photoelectric conversion region and the second photoelectric conversion region, the first and second photoelectric conversion regions include an N-type impurity region, the first and second impurity regions include a P-type impurity region, the second impurity region is closer to the second side of the semiconductor substrate than the first impurity region, and a cross-sectional area of the first impurity region is larger than a cross-sectional area of the second impurity region. ### Claim 14 (depends on 13) The imaging device according to claim 13, further comprising a third impurity region associated with the second impurity region along a direction of increasing depth of the semiconductor substrate, wherein the cross-sectional area of the third impurity region is smaller than a cross-sectional area of the second impurity region. ### Claim 15 (depends on 13) The imaging device according to claim 13, wherein each of the impurity regions, when viewed in a direction of increasing depth of the semiconductor substrate, has a generally uniform cross-sectional area that is different for at least two of the impurity regions. ### Claim 16 (depends on 13) The imaging device according to claim 13, wherein each of the impurity regions, when viewed in a direction of increasing depth of the semiconductor substrate, has a generally uniform cross-sectional area equal to the generally uniform cross-sectional area of each other impurity region. ### Claim 17 (depends on 13) The imaging device according to claim 13, wherein each of the impurity regions has an ion concentration different from the ion concentration of at least one other impurity region. ### Claim 18 (depends on 13) The imaging device according to claim 13, wherein the imaging device is a CCD imaging device. ### Claim 19 (depends on 13) The imaging device according to claim 13, wherein the imaging device is a CMOS imaging device. ### Claim 20 (depends on 13) The imaging device according to claim 13, further comprising a third impurity region associated with the second impurity region along a direction of increasing depth of the semiconductor substrate, wherein each successive impurity region of the impurity regions in the direction of increasing depth of the semiconductor substrate has a generally uniform cross-sectional area that is less than that of a preceding adjoining impurity region.