# US 9,520,424 B2 · Black level correction (BLC) structure

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- Number: US 9,520,424 B2
- Document ID: US9520424B2
- Status: Granted
- Kind: B2
- Application number: 13/663,108
- Filed: 2012-10-29
- Published: 2014-05-01
- Granted: 2016-12-13
- Earliest claimed: 2012-10-29
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company Limited
- Inventors: Shiu-Ko JangJian; Chi-Cherng Jeng; Volume Chien
- Web page: https://patentgrep.com/patent/US9520424B2

## CPC

- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- G02F 1/136209: {Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element}
- H10F 39/182: {Colour image sensors}
- H10F 39/8057: {Optical shielding}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

One or more techniques or systems for forming a black level correction (BLC) structure are provided herein. In some embodiments, the BLC structure comprises a first region, a second region above at least some of the first region, and a third region above at least some of the second region. For example, the first region comprises silicon and the third region comprises a passivation dielectric. In some embodiments, the second region comprises a first sub-region, a second sub-region above the first sub-region, and a third sub-region above the second sub-region. For example, the first sub-region comprises a metal-silicide, the second sub-region comprises a metal, and the third sub-region comprises a metal-oxide. In this manner, a BLC structure is provided, such that a surface of the BLC structure is flush, at least because the third region is flush, for example.

## Claims

### Claim 1

An image sensor associated with a black level correction (BLC) structure, the BLC structure comprising:
a first layer comprising silicon;
a region comprising:
a second layer comprising metal-silicide, at least some of the second layer above at least some of the first layer;
a third layer comprising metal, at least some of the third layer above the second layer; and
a fourth layer comprising metal-oxide, at least some of the fourth layer above an uppermost surface of the third layer; and
a fifth layer comprising passivation dielectric, at least some of the fifth layer above at least some of the fourth layer and the fifth layer in direct physical contact with at least some of a top surface of the fourth layer so as to form a lateral interface with the fourth layer.

### Claim 2 (depends on 1)

The image of sensor of claim 1, the fourth layer configured to reflect light from the BLC structure.

### Claim 3 (depends on 1)

The image of sensor of claim 1, at least some of a sidewall of the third layer in direct physical contact with the first layer.

### Claim 4 (depends on 1)

The image of sensor of claim 1, the metal-oxide associated with a dielectric constant greater than five.

### Claim 5 (depends on 1)

The image of sensor of claim 1, at least some of a sidewall of the fourth layer in direct physical contact with the first layer.

### Claim 6 (depends on 1)

The image of sensor of claim 1, at least some of the second layer embedded in the first layer.

### Claim 7 (depends on 1)

The image of sensor of claim 1, at least some of the third layer embedded in the first layer.

### Claim 8 (depends on 1)

The image of sensor of claim 1, at least some of the fourth layer embedded in the first layer.

### Claim 9 (depends on 1)

The image of sensor of claim 1, at least some of a sidewall of the second layer in direct physical contact with the fifth layer.

### Claim 10 (depends on 1)

The image of sensor of claim 1, at least some of the fifth layer surrounding at least some of a side of at least one of the second layer, the third layer, or the fourth layer.

### Claim 11

An image sensor associated with a black level correction (BLC) structure, the BLC structure comprising:
a first layer comprising silicon;
a region comprising:
a second layer comprising metal-silicide, at least some of the second layer above at least some of the first layer;
a third layer comprising metal, at least some of the third layer above the second layer and in direct physical contact with the second layer and at least some of a sidewall of the third layer in direct physical contact with the first layer; and
a fourth layer comprising metal-oxide, at least some of the fourth layer above the third layer; and
a fifth layer comprising passivation dielectric, at least some of the fifth layer above the fourth layer.

### Claim 12 (depends on 11)

The image sensor of claim 11, at least some of the fifth layer laterally co-planar with the third layer.

### Claim 13 (depends on 11)

The image sensor of claim 11, at least some of a sidewall of the fourth layer in direct physical contact with the first layer.

### Claim 14 (depends on 11)

The image sensor of claim 11, the fifth layer in direct physical contact with at least some of a top surface of the fourth layer.

### Claim 15 (depends on 11)

The image sensor of claim 11, at least some of the region embedded in the first layer.

### Claim 16 (depends on 11)

The image sensor of claim 11, at least some of the second layer embedded in the first layer.

### Claim 17 (depends on 11)

The image sensor of claim 11, at least some of the third layer embedded in the first layer.

### Claim 18 (depends on 11)

The image sensor of claim 11, at least some of the-sidewall of the third layer in direct physical contact with the fifth layer.

### Claim 19 (depends on 11)

The image sensor of claim 11, at least some of the fifth layer over the first layer.

### Claim 20

An image sensor associated with a black level correction (BLC) structure, the BLC structure comprising:
a first layer comprising silicon;
a region comprising:
a second layer comprising metal-silicide, at least some of the second layer embedded in the first layer;
a third layer comprising metal, at least some of the third layer above at least some of the second layer; and
a fourth layer comprising metal-oxide, at least some of the fourth layer above at least some of the third layer; and
a fifth layer comprising passivation dielectric, at least some of the fifth layer above at least some of the fourth layer, and at least some of a sidewall of the second layer in direct physical contact with the fifth layer.