# US 9,520,353 B2 · Metal-insulation-metal device

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- Number: US 9,520,353 B2
- Document ID: US9520353B2
- Status: Granted
- Kind: B2
- Application number: 14/710,243
- Filed: 2015-05-12
- Published: 2015-08-27
- Granted: 2016-12-13
- Earliest claimed: 2011-04-01
- Assignees: Himax Technologies Limited
- Applicants: Himax Technologies Limited
- Inventors: Hung-Sui Lin; Mao-Hsiung Lin
- Web page: https://patentgrep.com/patent/US9520353B2

## CPC

- H10W 20/495: {Capacitive arrangements or effects of, or between wiring layers}
- H10D 1/043: {using patterning processes to form electrode extensions, e.g. etching}
- H10D 1/692: {Electrodes}
- H10D 1/714: {having horizontal extensions}
- H10W 20/496: {Capacitor integral with wiring layers}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A metal-insulation-metal (MIM) device including a first metal layer, a first insulation layer, a second metal layer, and a second insulation layer is provided. The first insulation layer is disposed on the first metal layer. The second metal layer is disposed on a part of the first insulation layer. The second insulation layer is disposed on a side wall of the second metal layer and on another part of the first insulation layer. A width of the first insulation layer under the second metal layer and the second insulation layer parallel to the first metal layer is greater than a with of the second metal layer parallel to the first metal layer.

## Claims

### Claim 1

A metal-insulation-metal (MIM) device comprising:
a first metal layer;
a first insulation layer disposed on the first metal layer;
a second metal layer disposed on a part of the first insulation layer; and
a second insulation layer disposed on a side wall of the second metal layer and on another part of the first insulation layer;
wherein a width of the first insulation layer under the second metal layer and the second insulation layer parallel to the first metal layer is greater than a width of the second metal layer parallel to the first metal layer, wherein the first insulation layer comprising a multilayer structure, and the multilayer structure comprises a first silicon dioxide sub-layer, a second silicon dioxide sub-layer and a silicon nitride sub-layer, wherein the first silicon dioxide sub-layer is disposed between the silicon nitride sub-layer and the first metal layer, the second silicon dioxide sub-layer is disposed between the silicon nitride sub-layer and the second metal layer, and the silicon nitride sub-layer is disposed between the first silicon dioxide sub-layer and the second silicon dioxide sub-layer, wherein a width of the first silicon dioxide sub-layer parallel to the first metal layer is greater than a width of the silicon nitride sub-layer parallel to the first metal layer, and the width of the silicon nitride sub-layer parallel to the first metal layer is greater than a width of the second silicon dioxide sub-layer parallel to the first metal layer.

### Claim 2 (depends on 1)

The MIM device according to claim 1 further comprising a third insulation layer covering the first metal layer, the first insulation layer, the second insulation layer and the second metal layer.

### Claim 3 (depends on 1)

The MIM device according to claim 1, wherein a width of the second insulation layer parallel to the first metal layer gradually decreases from a side of the second insulation layer close to the first metal layer to another side of the second insulation layer away from the first metal layer.

### Claim 4 (depends on 1)

The MIM device according to claim 1, wherein the second insulation layer is a silicon dioxide layer.