# US 9,520,346 B2 · Power semiconductor module and method for manufacturing the same

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- Number: US 9,520,346 B2
- Document ID: US9520346B2
- Status: Granted
- Kind: B2
- Application number: 14/678,105
- Filed: 2015-04-03
- Published: 2016-08-04
- Granted: 2016-12-13
- Earliest claimed: 2015-02-04
- Assignees: Hyundai Mobis Co., Ltd.
- Applicants: HYUNDAI MOBIS Co., Ltd
- Inventors: Jae Hyun Ko
- Web page: https://patentgrep.com/patent/US9520346B2

## CPC

- H10W 70/461: {specially adapted for cooling}
- H10W 70/421: {Shapes or dispositions}
- H10W 70/457: {of metallic layers on leadframes}
- H10W 70/417: {Bonding materials between chips and die pads}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention relates to a power semiconductor module in which heat from the semiconductor chip is radiated not only through the buffer, but also through the lead frame to increase heat radiation efficiency, and the semiconductor chip, the buffer, and the lead frame are simultaneously bonded to increase efficiency of bonding work, and a method for manufacturing the same.

## Claims

### Claim 1

A power semiconductor module, comprising:
a semiconductor chip;
a buffer coupled to the semiconductor chip; and
a lead frame coupled to a lower portion of the buffer,
wherein the buffer comprises a plate shape and is formed of copper, and an upper surface of the buffer is bonded onto a bottom surface of the semiconductor chip by an upper solder,
wherein the lead frame comprises a plate shape and is formed of copper, and an upper surface of the lead frame is bonded onto a bottom surface of the buffer by a lower solder, and
wherein the upper solder comprises a mixture of 3.0 to 7.0% by weight of tin and 93.0 to 97.0% by weight of antimony, and the lower solder comprises a mixture of 94.5 to 97.0% by weight of tin, 2.5 to 4.5% by weight of silver, and 0.5 to 1.0% by weight of copper.

### Claim 2 (depends on 1)

The power semiconductor module of claim 1, wherein the copper of the buffer is non-deoxidized and not plated.

### Claim 3 (depends on 2)

The power semiconductor module of claim 2, wherein a thickness of the buffer is 4.5 to 5.5 mm.

### Claim 4 (depends on 1)

The power semiconductor module of claim 1, wherein the upper and lower solders are of a sheet or paste type.

### Claim 5 (depends on 1)

The power semiconductor module of claim 1, wherein the copper of the lead frame is non-deoxidized and not plated.

### Claim 6 (depends on 5)

The power semiconductor module of claim 5, wherein a thickness of the lead frame is 1.0 to 2.0 mm.

### Claim 7 (depends on 1)

The power semiconductor module of claim 1, wherein the plate shape of the lead frame is centrally located with respect to the plate shape of the buffer.