# US 9,520,343 B1 · Field-effect transistor structure for preventing from shorting

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- Number: US 9,520,343 B1
- Document ID: US9520343B1
- Status: Granted
- Kind: B1
- Application number: 14/729,588
- Filed: 2015-06-03
- Published: 2016-12-08
- Granted: 2016-12-13
- Earliest claimed: 2015-06-03
- Assignees: Great Team Backend Foundry, Inc.
- Applicants: Chung Hsing Tzu
- Inventors: Chung Hsing Tzu
- Web page: https://patentgrep.com/patent/US9520343B1

## CPC

- H10W 70/466: {Tape carriers or flat leads}
- H10W 72/60: Strap connectors, e.g. thick copper clips for grounding of power devices
- H10W 70/417: {Bonding materials between chips and die pads}
- H10W 70/424: {Cross-sectional shapes (H10W70/481 takes precedence)}
- H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00}
- H10W 72/073: {of die-attach connectors}
- H10W 72/076: {of strap connectors}
- H10W 72/07631: {Techniques}
- H10W 72/325: {Die-attach connectors having a filler embedded in a matrix}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/621: {Structures or relative sizes of strap connectors}
- H10W 72/631: {Shapes of strap connectors}
- H10W 72/634: {Cross-sectional shape}
- H10W 72/645: {of outermost layers of multilayered strap connectors, e.g. coating being only on a part of a core}
- H10W 72/652: {comprising metals or metalloids, e.g. silver}
- H10W 72/655: {of outermost layers of multilayered strap connectors, e.g. material of a coating}
- H10W 72/926: {Multiple bond pads having different sizes}
- H10W 90/736: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A field-effect transistor (FET) structure for preventing from shorting is disclosed. The field-effect transistor (FET) structure is applying to a power discrete device, such as the MOSFET or IGBT. The field-effect transistor structure comprises a MOSFET chip and a metal clip. A silver layer (or silver string) is welded on the surface of the metal clip jointed with the source pad so that the silver paste may be not overflowed and permeated into the gate bus to achieve the effect of preventing from shorting.

## Claims

### Claim 1

A field-effect transistor structure for preventing from shorting, comprising:
a MOSFET chip, a source pad and a gate pad are fabricated thereon, and a gate bus is cut on the source pad so as to electrically connect with the gate pad;
a metal clip, one end thereof is electrically connected with the source pad of the MOSFET chip and the other end thereof is electrically connected with a pin;
a plurality of grooves, concavely arranged on the metal clip and corresponding to a surface of the metal clip faced to the conjunction of the metal clip and source pad, and a silver layer is fabricated in each groove; and
a silver paste, welded in a predetermined area of the source pad of the MOSFET chip which is desired to bond with the metal clip.

### Claim 2 (depends on 1)

The structure as claimed in claim 1, wherein each groove is dodged the gate bus fabricated on the source pad.

### Claim 3 (depends on 1)

The structure as claimed in claim 1, wherein the silver layer is coated or welded on each groove.

### Claim 4

A field-effect transistor structure for preventing from shorting, comprising:
a MOSFET chip, a source pad and a gate pad are fabricated thereon, and a gate bus is cut on the source pad so as to electrically connect with the gate pad;
a metal clip, one end thereof is electrically connected with the source pad of the MOSFET chip and the other end thereof is electrically connected with a pin;
a plurality of silver metals, fabricated on the metal clip and corresponding to a surface of the metal clip faced to the conjunction of the metal clip and source pad, and a silver layer is fabricated in each groove; and
a silver paste, welded in a predetermined area of the source pad of the MOSFET chip which is desired to bond with the metal clip.

### Claim 5 (depends on 4)

The structure as claimed in claim 4, wherein each silver metal is dodged the gate.

### Claim 6 (depends on 4)

The structure as claimed in claim 4, wherein the silver layer is coated or welded on each silver metal.