# US 9,520,330 B2 · Integrated circuit comprising PMOS transistors with different voltage thresholds > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,520,330 B2 - Document ID: US9520330B2 - Status: Granted - Kind: B2 - Application number: 14/978,428 - Filed: 2015-12-22 - Published: 2016-07-07 - Granted: 2016-12-13 - Earliest claimed: 2014-12-22 - Assignees: Commissariat A L'energie Atomique Et Aux Energies Alternatives; International Business Machines Corporation - Applicants: Commissariat a L'Energie Atomique et aux Energies Alternatives; International Business Machines Corporation - Inventors: Francois Andrieu; Nicolas Degors; Pierre Perreau - Web page: https://patentgrep.com/patent/US9520330B2 ## CPC - H10D 86/01: Manufacture or treatment - H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)} - H10D 84/0128: {Manufacturing their channels} - H10D 84/0144: {Manufacturing their gate insulating layers} - H10D 84/038: {using silicon technology, e.g. SiGe} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract There is provided a method for the manufacture of an integrated circuit, including a substrate and an insulating layer formed on the substrate; a first pMOS transistor formed on the insulating layer and including a channel formed in a first layer of a silicon—germanium alloy, having a first thickness and first average germanium density; a gate oxide layer having a first equivalent oxide thickness; a second pMOS transistor formed on the insulating layer and further including a channel formed in a second layer of a silicon—germanium alloy, having a second thickness which is greater than the first and a second average germanium density which is lower than the first; and a gate oxide layer having a second equivalent oxide thickness which is greater than the first. ## Claims ### Claim 1 A method for the manufacture of an integrated circuit incorporating first and second pMOS transistors, comprising: providing a substrate, an insulating layer formed on the substrate, and a silicon layer formed on at least first and second zones of the insulating layer; reducing a thickness of the silicon layer above the first zone of the insulating layer, such that the silicon layer in the first zone shows a smaller thickness than the silicon layer in the second zone; forming a first deposit of silicon—germanium on the silicon layer above the first zone of the insulating layer and a second deposit of silicon—germanium on the silicon layer above the second zone of the insulating layer; forming a mask covering the second deposit of silicon—germanium and exposing the first deposit of silicon—germanium; in the presence of said mask, condensing germanium in the first deposit to form silicon oxide on the surface of the first deposit, such that germanium is diffused into said silicon layer below the first deposit to form a layer of silicon—germanium between said silicon oxide and said first zone of the insulating layer; removing said formed silicon oxide, until a thickness of the formed layer of silicon—germanium is smaller than a cumulative thickness of the second deposit of silicon—germanium and the silicon layer above the second zone of the insulating layer, such that an average density of germanium in the thickness of the silicon—germanium layer formed from the second deposit is greater than an average density of germanium in the cumulative thickness of the second deposit of silicon—germanium and the silicon layer above the second zone; removing said formed mask; and forming, on said silicon—germanium layer, a first gate stack of the first pMOS transistor, said first gate stack incorporating a first gate oxide and forming, on said second deposit formed on the silicon layer, a second gate stack of the second pMOS transistor, said second stack incorporating a second gate oxide, wherein the second gate oxide has a second equivalent oxide thickness, which is greater than a first equivalent oxide thickness of the first gate oxide. ### Claim 2 (depends on 1) The method for the manufacture of an integrated circuit according to claim 1, wherein the formation of said first and second deposits of silicon—germanium includes the epitaxial growth of silicon—germanium. ### Claim 3 (depends on 1) The method for the manufacture of an integrated circuit according to claim 1, further comprising forming first and second ground planes respectively below the first and second zones of the insulating layer, wherein said forming includes the incorporation of dopants into the substrate. ### Claim 4 (depends on 1) The method for the manufacture of an integrated circuit according to claim 1, wherein the forming said mask comprises depositing a nitride to a minimum thickness of 10 nm. ### Claim 5 (depends on 1) The method for the manufacture of an integrated circuit according to claim 1, wherein the removal of silicon oxide is executed such that said formed silicon—germanium layer incorporates at least 90% of the germanium dosing from the first deposit of silicon-germanium. ### Claim 6 (depends on 1) The method for the manufacture of an integrated circuit according to claim 1, wherein said first and second deposits of silicon—germanium are formed simultaneously, and are of equal thickness, with an equal surface dosing of silicon—germanium. ### Claim 7 (depends on 1) The method for the manufacture of an integrated circuit according to claim 1, wherein said layer of silicon—germanium and said second deposit of silicon—germanium show respective thicknesses that are smaller than their respective relaxation thicknesses. ### Claim 8 (depends on 1) The method for the manufacture of an integrated circuit according to claim 1, wherein 1.2*Ct4