# US 9,520,288 B2 · Semiconductor device including IGZO layer and manufacturing method thereof

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- Number: US 9,520,288 B2
- Document ID: US9520288B2
- Status: Granted
- Kind: B2
- Application number: 14/723,981
- Filed: 2015-05-28
- Published: 2015-11-26
- Granted: 2016-12-13
- Earliest claimed: 2009-09-24
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Akiharu Miyanaga; Junichiro Sakata; Masayuki Sakakura; Shunpei Yamazaki
- Web page: https://patentgrep.com/patent/US9520288B2

## CPC

- H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6756: {Amorphous oxide semiconductors}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 62/40: Crystalline structures
- H10D 62/80: characterised by the materials
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering
- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

It is an object to provide a thin film transistor having favorable electric characteristics and high reliability and a semiconductor device which includes the thin film transistor as a switching element. An In—Ga—Zn—O-based film having an incubation state that shows an electron diffraction pattern, which is different from a conventionally known amorphous state where a halo shape pattern appears and from a conventionally known crystal state where a spot appears clearly, is formed. The In—Ga—Zn—O-based film having an incubation state is used for a channel formation region of a channel etched thin film transistor.

## Claims

### Claim 1

A method for manufacturing a semiconductor device comprising the steps of:
introducing a substrate into a chamber, wherein the chamber is provided with a target comprising In, Ga and Zn, and wherein a relative density of the target is greater than or equal to 80%;
forming an oxide semiconductor layer by sputtering over the substrate, wherein the substrate is heated during the sputtering;
removing moisture by using a cryopump from the chamber during forming the oxide semiconductor layer by sputtering; and
performing dehydration or dehydrogenation by heat treatment after the oxide semiconductor layer is formed,
wherein the oxide semiconductor layer comprises In, Ga and Zn, and
wherein a purity of an inert gas which is introduced into a heat treatment apparatus during the heat treatment is set greater than or equal to 99.9999%.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the substrate is heated at a temperature of 400° C. to 700° C. during the sputtering.

### Claim 3 (depends on 1)

The method according to claim 1, wherein an electron diffraction pattern of the oxide semiconductor layer does not show a halo shape pattern.