# US 9,520,282 B2 · Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,520,282 B2 - Document ID: US9520282B2 - Status: Granted - Kind: B2 - Application number: 14/719,097 - Filed: 2015-05-21 - Published: 2015-09-10 - Granted: 2016-12-13 - Earliest claimed: 2013-03-05 - Assignees: Hitachi Kokusai Electric Inc. - Applicants: Hitachi Kokusai Electric Inc. - Inventors: Katsuyoshi Harada; Yoshiro Hirose; Tsukasa Kamakura; Atsushi Sano; Yugo Orihashi - Web page: https://patentgrep.com/patent/US9520282B2 ## CPC - H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD} - C23C 16/0272: {Deposition of sub-layers, e.g. to promote the adhesion of the main coating} - C23C 16/24: Deposition of silicon only - C23C 16/4408: {by purging residual gases from the reaction chamber or gas lines} - C23C 16/45523: {Pulsed gas flow or change of composition over time} - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - H10P 14/416: {of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers} - H10P 14/6506: {Formation of intermediate materials} - H10P 14/668: {the materials being characterised by the deposition precursor materials} - H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract A method of manufacturing a semiconductor device is provided. The method includes treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate, and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times. The cycle includes supplying a second gas containing the predetermined element and a halogen group to the substrate, and supplying a third gas to the substrate. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, comprising: treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate; and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second gas containing the predetermined element and a halogen group to the substrate; and supplying a third gas to the substrate, wherein in the act of treating the surface of the insulating film, the surface of the insulating film is terminated by the halogen group. ### Claim 2 (depends on 1) The method of claim 1, wherein a temperature of the substrate when treating the surface of the insulating film is set higher than a temperature of the substrate when forming the thin film. ### Claim 3 (depends on 1) The method of claim 1, wherein the first gas and the second gas comprise the same substance. ### Claim 4 (depends on 1) The method of claim 1, wherein the first gas comprises at least one selected from a group consisting of a hydrogen chloride gas and a chlorine gas. ### Claim 5 (depends on 1) The method of claim 1, wherein the first gas further contains the predetermined element. ### Claim 6 (depends on 1) The method of claim 1, wherein the third gas contains the predetermined element and an amino group. ### Claim 7 (depends on 1) The method of claim 1, wherein the thin film is composed of the predetermined element. ### Claim 8 (depends on 1) The method of claim 1, wherein the third gas contains one amino group in one molecule. ### Claim 9 (depends on 1) The method of claim 1, wherein the third gas comprises at least one selected from a group consisting of a nitrogen-containing gas, an oxygen-containing gas, a hydrogen-containing gas, a carbon-containing gas, a carbon- and nitrogen-containing gas, and a boron-containing gas. ### Claim 10 (depends on 1) The method of claim 1, wherein the halogen group comprises a chloro group or a fluoro group. ### Claim 11 (depends on 1) The method of claim 1, wherein the insulating film comprises at least one selected from a group consisting of an oxide film, a nitride film, and an oxynitride film. ### Claim 12 A method of manufacturing a semiconductor device, comprising: treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate; and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second gas containing the predetermined element and a halogen group to the substrate; and supplying a third gas to the substrate, wherein in the act of treating the surface of the insulating film, a seed layer containing the halogen group is formed on the surface of the insulating film, and wherein a thickness of the seed layer is 0.5 to 2 Å. ### Claim 13 A method of manufacturing a semiconductor device, comprising: treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate; and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second gas containing the predetermined element and a halogen group to the substrate; and supplying a third gas to the substrate, wherein the first gas and the second gas comprise different substances. ### Claim 14 A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of: treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate; and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second gas containing the predetermined element and a halogen group to the substrate; and supplying a third gas to the substrate, wherein in the process of treating the surface of the insulating film, the surface of the insulating film is terminated by the halogen group.